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C5802D PDF даташит

Спецификация C5802D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «KSC5802D».

Детали детали

Номер произв C5802D
Описание KSC5802D
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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C5802D Даташит, Описание, Даташиты
KSC5802D
High Voltage Color Display Horizontal Equivalent Circuit
Deflection Output
C
(Built In Damper Diode)
• High Breakdown Voltage BVCBO=1500V
• High Speed Switching : tF=0.1µs (Typ.)
www.DataSheet4U.com • Wide S.O.A
B
• For C-Monitor(69KHz)
50typ.
E
NPN Triple Diffused Planar Silicon Transistor
1
1.Base
TO-3PF
2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
800
6
10
30
60
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tF
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
VCE = 1400V, VBE=0
VCB = 800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 6A
IC = 6A, IB = 1.5A
IC = 6A, IB = 1.5A
VCC = 200V, IC = 6A
IB1 = 1.2A, IB2= - 2.4A
RL = 33.3
Min.
50
15
7
Typ.
0.1
Max.
1
10
250
40
11.5
3
1.5
0.3
Units
mA
µA
mA
V
V
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000









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C5802D Даташит, Описание, Даташиты
Typical Characteristics
www.DataSheet4U.com
10
9
8 IB = 1.0A
IB = 900mA
7 IB = 800mA
IB = 700mA
6 IB = 600mA
IB = 500mA
5 IB = 400mA
IB = 300mA
4 IB = 200mA
3 IB = 100mA
2
1
0
0 2 4 6 8 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterisic
10
1
IC=5IB
IC=3IB
0.1
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
RESISTIVE LOAD
VCC=200V
IC=6A
IB1=1.2A
1
tstg
tf
0.1
0.1 1
-IB2[A], BASE CURRENT
Figure 5. Switching Time
10
©2000 Fairchild Semiconductor International
100
VCE=5V
10
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
12
VCE = 5V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
100
10
DC 100ms
10µs
100µs
10ms 1ms
1
0.1
SINGLE PULSE
Tc=25
0.01
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000









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C5802D Даташит, Описание, Даташиты
Typical Characteristics (Continued)
100
www.DataSheet4U.com
10
IB2 = -1A CONST
(at IC >= 5A)
1
IC = 5IB1 = 5IB2
L = 500µH
SINGLE PULSE
0.1
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC[], CASE TEMPERATURE
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000










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