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PDF H2717 Data sheet ( Hoja de datos )
| Número de pieza | H2717 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H2717 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H2717
█ APPLICATIONS
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation…………………………………300mW
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………4V
IC——Collector Current…………………………………………50mA
Ie——Emitter Current…………………………………………-50mA
TO-92
1―Base，B
2―Emitter，E
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat）
VBE(sat)
Cob
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Output Capacacitance
Current Gain-Bandwidth Product
Gpe Power Gain（Fig）
Min Typ Max Unit
Test Conditions
30 V IC=100μA，IE=0
25 V IC=10mA，IB=0
4 V IE=100μA，IC=0
0.1 μA VCB=30V, IE=0
0.1 μA VEB=3V, IC=0
40 240
VCE=12.5V, IC=12.5mA
0.2 V IC=15mA, IB=1.5mA
1.5 V IC=15mA,IB=1.5mA
0.8 2.0 pF VCB=10V,IE=0，f=30MHz
300 MHz VCE=12.5V, IC=12.5mA
28
36
dB
Vcc=12.5V, IE=-12.5mA,
f=45MHz
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| PDF Descargar | [ Datasheet H2717.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| H2717 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
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