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Número de pieza | BCR16LM-12LB | |
Descripción | Triac | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR16LM-12LB (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! BCR16LM-12LB
Triac
Medium Power Use
Features
• IT (RMS) : 16 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 30 mA
• Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
1
23
Preliminary
REJ03G1805-0100
Rev.1.00
Jul 22, 2009
• The Product guaranteed maximum junction
temperature 150°C
• Insulated Type
• Planar Passivation Type
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, copying machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
16
160
106.5
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 87°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7
1 page BCR16LM-12LB
Holding Current vs.
Junction Temperature
103
7 Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80 III Quadrant
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Preliminary
Latching Current vs.
Junction Temperature
103
7
5
3 Distribution T2+, G–
2 Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
–40
0
40 80 120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100 III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
102
7
Main Voltage
(dv/dt)c
5 Main Current
IT
3τ
2
Time Typical Example
VD Tj = 125°C
(di/dt)c IT = 4A
τ = 500µs
Time VD = 200V
f = 3Hz
101
7 Minimum
5 Characteristics
Value
3
I Quadrant
2
III Quadrant
100
7
3
5 7 101
23
5 7 102
23
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 5 of 7
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BCR16LM-12LB.PDF ] |
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