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HBCA114ES6R PDF даташит

Спецификация HBCA114ES6R изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «PNP and NPN Dual Digital Transistors».

Детали детали

Номер произв HBCA114ES6R
Описание PNP and NPN Dual Digital Transistors
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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HBCA114ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA114ES6R
Spec. No. : C152S6R
Issued Date : 2003.05.28
Revised Date : 2005.01.14
Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA114E chip and one DTC114E chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference
Equivalent Circuit
HBCA114ES6R
RBE2
RB2
TR1
RBE1
RB1
TR2
SOT-363R
RB1=10k, RB2=10 k
RBE1=10k, RBE2=10 k
HBCA114ES6R
www.DataSheet.in
CYStek Product Specification









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HBCA114ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C152S6R
Issued Date : 2003.05.28
Revised Date : 2005.01.14
Page No. : 2/6
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
50 -50
100 -100
200 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
-
3
-
-
-
30
7
0.8
-
- 0.5 V VCC=5V, IO=100µA
- - V VO=0.3V, IO=10mA
- 0.3 V IO/II=10mA/0.5mA
- 0.88 mA VI=5V
- 0.5 µA VCC=50V, VI=0V
- - - VO=5V, IO=5mA
10 13 k-
1 1.2 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
-
-3
-
-
-
30
7
0.8
-
- -0.5 V VCC=-5V, IO=-100µA
- - V VO=-0.3V, IO=-10mA
- -0.3 V IO/II=-10mA/-0.5mA
- -0.88 mA VI=-5V
- -0.5 µA VCC=-50V, VI=0V
- - - VO=-5V, IO=-5mA
10 13 k-
1 1.2 - -
250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA114ES6R
www.DataSheet.in
CYStek Product Specification









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HBCA114ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Characteristic Curves
•Tr1(NPN)
Spec. No. : C152S6R
Issued Date : 2003.05.28
Revised Date : 2005.01.14
Page No. : 3/6
Current Gain vs Output Current
1000
Vo=5V
Output Voltage vs Output Current
1000
Io / Ii=20
100 100
10
1
10
Output Current ---Io(mA)
100
Input Voltage vs Output Current (ON characteristics)
10
Vo=0.3V
1
0.1 1
10 100
Output Current --- Io(mA)
10
1 10 100
Output Current ---Io(mA)
Output Current vs Input Voltage (OFF characteristics)
100
Vcc=5V
10
1
0.1
0.1
1
Input Voltage --- VI(off)(V)
10
HBCA114ES6R
www.DataSheet.in
CYStek Product Specification










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