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WTP772 PDF даташит

Спецификация WTP772 изготовлена ​​​​«Weitron Technology» и имеет функцию, называемую «(WTP772 / WTP882) PNP/NPN Epitaxial Planar Transistors».

Детали детали

Номер произв WTP772
Описание (WTP772 / WTP882) PNP/NPN Epitaxial Planar Transistors
Производители Weitron Technology
логотип Weitron Technology логотип 

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WTP772 Даташит, Описание, Даташиты
PNP/NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-B ase Voltage
Emitter-B ase Voltage
Collector Current (DC)
Collector Current (Pulse)1
B ase Current
Total Device Dissipation Tc=25 C
TA=25°C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCB O
VE B O
IC(DC)
IC (Pulse)
IB (Pulse)
PD
Tj
Tstg
WTP772
WTP882
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
123
PNP/WTP772
-30
-40
-5 . 0
-3 . 0
-7 . 0
-0 . 6
NPN/WTP882
30
40
5.0
3.0
7.0
0.6
10
1.4
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
C
C
Device Marking
WTP 772=B 772 , WTP 882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/ 10 mAdc, IB=0)
Collector-B ase B reakdown Voltage (IC= -100/ 100 µAdc, IE=0)
Emitter-B ase B reakdown Voltage (IE= -100/ 100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/ 30 Vdc, I B =0)
Collector Cutoff Current (VCB = -40/ 40 Vdc, IE=0)
Emitter Cutoff Current (VEB = -6.0/ 6.0Vdc, I C =0)
N OT E : 1 . P W 3 5 0 us , duty cycle 2 %
Symbol Min Max
V(BR)CEO -30/ 30 -
V(B R)CB O -40/ 40
V(B R)EB O -5.0/ 5.0
-
-
ICE0
- -1.0/ 1.0
ICBO
- -1.0/ 1.0
IEBO
- -1.0/ 1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
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WTP772 Даташит, Описание, Даташиты
WTP772
WTP882
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min TYP
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
60 - 400 -
32 - - -
-
-
-0.5/0.5
Vdc
-
-
-2.0/2.0
Vdc
- 80/90 - MHz
Classification of hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
WEITRON
http://www.weitron.com.tw
www.DataSheet.in









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WTP772 Даташит, Описание, Даташиты
WTP772
WTP882
F1. Total Power Dissipation VS.
Ambient Temperature
10
8
NOTE
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
6
4 25
100
cm 2
cm
2
2 9 cm 2
Without heat sink
0 50 100 150
Ta-Amient Temperature-°C
F3. Thermal Resistance VS.
Pulse Width
VCE=10V
°
IC =1.0A
30 Duty=0.001
10
3
1
0.3
0.1 0.3 1
3 10 30 100 300 1000
PW-Pulse Width-ms
WTP772
F5. Collector Current VS. Collector
To Emitter Voltage
-2.0
Pulse Test
IB=-10mA
-1.6 IB=-9mA
IB=-8MA
IB=-7mA
-1.2 IB=-6mA
IB=-5mA
-0.8
IB=-4mA
IB=-3mA
-0.4 IB=-2mA
0
0 -4
IB=-1mA
-8 -12 -16 -20
vCE -Collector-Emitter Voltage(V)
F.2 Derating Curve for All Types
100
80
60
S/b limited
40
20
0
0
50
100
150
Tc,Case Temperature(°C)
F4. Safe Operating Areas
( )10
3
Ic(max),Pulse DPuWty<-Cy1c0lem<-s50 %
Ic(max),DC 10mS
1mS
PW=100 us
1
0.3
(SinglDeLisnimsoiniptreaedtpioentitivse/bpLuilmseit)ed
0.1
NOTE
1. Tc=25 C
0.03 2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
0.01
1
3 6 10
30 60
100
VCE-Collector to Emitter Voltage-V
WTP882
F6. Collector Current VS. Collector
To Emitter Voltage
2.0
Pulse Test
IB=10mA
1.6 IB=9mA
IB=8MA
IB=7mA
1.2 IB=6mA
IB=5mA
0.8
IB=4mA
IB=3mA
0.4 IB=2mA
IB=1mA
0
04
8 12 16 20
vCE -Collector-Emitter Voltage(V)
WEITRON
http://www.weitron.com.tw
www.DataSheet.in










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Номер в каталогеОписаниеПроизводители
WTP772(WTP772 / WTP882) PNP/NPN Epitaxial Planar TransistorsWeitron Technology
Weitron Technology

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