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PDF WTPB12A60CW Data sheet ( Hoja de datos )
| Número de pieza | WTPB12A60CW | |
| Descripción | Sensitive Gate Bi-Directional Triode Thyristor | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
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WTPB12A60CW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=12A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
■ High Commutation dV/dt.
General Description
General purpose swithhing and phase control applications.
These devices are intended to be interfaced directly to
micro-controllers, logic integrated circuits and other low power
gate trigger circuits such as fan speed and temperature
modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VPRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58℃)
600 V
12 A
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
120/126
A
I2t Circuit Fusing Considerations (tp= 10 ms)
100 A2s
PGM Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5W
PG(AV)
dI/dt
IFGM
VRGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs
TJ=125℃
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
1W
50 A/μs
4A
10 V
TJ, Junction Temperature
-40~125
℃
Tstg Storage Temperature
-40~150
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.4
- - 60
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
T03-3
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1 page  
TO-220 Package Dimension
WTPB12A60CW
Unit: mm
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