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Número de pieza | WTPB4A60SW | |
Descripción | Bi-Directional Triode Thyristor | |
Fabricantes | WINSEMI SEMICONDUCTOR | |
Logotipo | ||
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WTPB4A60SW
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
◆ High Commutation dv/dt
◆ High Junction temperature(TJ=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
VDRM/VRRM
I
T(RMS)
I
TSM
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T = 110 °C
J
One cycle, Peak value, non-
repetitive full cycle
50Hz
60Hz
T = 125 °C
J
T = 125 °C
J
600 V
4.0 A
30
A
31
5.1
5
1
4.0
7.0
-40~+150
-40~+150
A2s
W
W
A
V
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Value
2.6
60
Units
℃/W
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
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TO220 Package Dimension
WTPB4A60SW
Unit: mm
Steady, all for your advance.
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet WTPB4A60SW.PDF ] |
Número de pieza | Descripción | Fabricantes |
WTPB4A60SW | Bi-Directional Triode Thyristor | WINSEMI SEMICONDUCTOR |
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