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PDF WTD40N03 Data sheet ( Hoja de datos )
| Número de pieza | WTD40N03 | |
| Descripción | Surface Mount P-Channel Enhancement Mode POWER MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
Features:
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <90m Ω@V GS =-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD40N03
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
4
1. GATE
1 23
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Drain-Source Voltage
Rating
Gate-Source Voltage
Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C)
Pulsed Drain Current1
Total Power Dissipation(TC=25˚C)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ,Tstg
Value
30
±20
-20
-13
150
50
2.5
110
- 55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
WEITRON
http:www.weitron.com.tw
www.DataSheet.in
1/6
12-Jul-07
1 page  
WTD40N03
100
10
100
10us
100us
10 1ms
10ms
D=0.01 Ta
100ms
1
1 10 100
VDS(V)
Fig 7. Maximum Safe Operating Area
16
14 Id=20A
12
10
VD=16V
VD=20V
VD=24V
8
6
4
2
1
0 5 10 15 20 25 30 35 40
QG , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
100
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t / T
Peak Tj=PDM x Rthjc + TC
0.01
0.00001 0.0001 0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
10000
f=1.0MHz
1000
Ciss
Coss
Crss
100
1 5 9 13 17 21 25 29
VDS (V)
Fig 10. Typical Capacitance Characteristics
3
10 Tj
1
0.1
Tj
2
1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VSD (V)
Fig 11. Forward Charateristics of
Reverse Diode
1.5
0
-50
0
50 100 150
Tj
Fig.12 Gate Threshold Voltage v.s.
Junction Temperature
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
5/6
12-Jul-07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTD40N03.PDF ] | |
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