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PDF WSP10D100 Data sheet ( Hoja de datos )
| Número de pieza | WSP10D100 | |
| Descripción | Power Schottky Rectifier | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
| Logotipo |  |
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WSP10D100
Power Schottky Rectifier
Features
■ 10A(1×5A),100V
■ VF(max)=0.60V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
K
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
VDRM
VDC
IF(RMS)
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
IF(AV)
Average forward current
IFSM
IRRM
dv/dt
TJ,
Tstg
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
100
100
10
5
10
150
1
10000
175
-40~150
Units
V
V
A
A
A
A
V/ns
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min Typ Max
- - 1.3
0.3 -
-
Units
℃/W
℃/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet WSP10D100.PDF ] | |
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