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PDF WSA753 Data sheet ( Hoja de datos )
| Número de pieza | WSA753 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | wooseok | |
| Logotipo |  |
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GENERAL PURPOSE AMPLIFIER
◇ Low Speed Switching
◇ Complement to WSC752
WSA753
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
Characteristic
Symbol Value Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base voltage
VEBO
-5
V
Collector Current(DC)
IC -2 A
Collector Current(Pulse)*
Ic -7 A
Base Current
Collector Power Dissipation(Tc=25℃)
Collector Power Dissipation(Ta=25℃)
Junction Temperature
IB
PC
PC
Tj
Storage Temperature
Tstg
-0.6
15
1.2
150
-55~
+150
A
W
W
℃
℃
*PW≤ 10ms,Duty Cycle≤ 50%
L0sdn
3
12
1. Base
2. Collector
3. Emitter
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
#hFE
Test Condition
Ic=-100㎂ ,IE=0
Ic=-10mA, IB=0
Ic=-1mA ,IC=0
VCB=-40V ,IE=0
VEB=-5V ,IC=0
VCE=-2V, IC=-500mA
*Collector-Emitter Saturation
Voltage
VCE(sat)(1) IC=-2.0A, IB=-200㎃
VCE(sat)(2) IC=-1.5A, IB=-30㎃
Current Gain Bandwith Product
Output Capacitance
fT VCE=-5V,IC=-500mA
Cob Vf=C1BM=H-1Z0V ,IE=0
* Pulse test:PW≤ 350us,Duty cycle≤ 2%
# hFE Classification:
Classification
O
hFE 100~200
Y
160~320
G
200~400
Min TYP MAX Unit
-40 V
-30 V
-5 V
-0.1 ㎂
-0.1 ㎂
100 400
-0.5 -0.8
-2
V
120 MHZ
13 pF
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
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