DataSheet26.com

WFY3P02 PDF даташит

Спецификация WFY3P02 изготовлена ​​​​«WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «20V P-Channel MOSFET».

Детали детали

Номер произв WFY3P02
Описание 20V P-Channel MOSFET
Производители WINSEMI SEMICONDUCTOR
логотип WINSEMI SEMICONDUCTOR логотип 

5 Pages
scroll

No Preview Available !

WFY3P02 Даташит, Описание, Даташиты
WFY3P02
20V, PChannel MOSFET
,
Features
-3.2A, -20V, RDS(on)(Max 130m)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
SOT-23 Surface Mount for Small Footprint
Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
D
G
S
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
VDSS
ID
PD
ID
PD
IDM
VGS
ESD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(Note 1)
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Gate to Source Voltage
Steady State
t10s
Steady State
t10s
Steady State
t=10s
Tc=25
Tc=85
Tc=25
Tc=25
Tc=25
Tc=85
Tc=25
ESD Capability (Note 3)
C=100pF,RS = 1500
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
-20
2.8
-1.7
-3.2
0.80
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
W
A
W
A
V
V
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
/W
/W
/W
Note 1: Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surfacemounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H03F
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P03-3
www.DataSheet.in









No Preview Available !

WFY3P02 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current(Note 4)
IGSS VGS = ±8 V, VDS = 0 V
Drain cutoff current(Note 4)
IDSS VDS = -16 V, VGS = 0 V
Drainsource breakdown voltage
V(BR)DSS ID = -250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = VDS, ID =-250 μA
Drainsource ON resistance
RDS(ON)
VGS = 4.5 V, ID = 2.8 A
VGS = 2.5 V, ID = 2.0 A
Forward Transconductance
gfs VDS = 5.0 V, ID = 2.8 A
Input capacitance
Ciss VDS = -6 V,
Reverse transfer capacitance
Crss VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Switching
time
(Note 5)
Turn-on Delay time
Turnon Rise time
Turn-off Delay time
Turnoff Fall time
td(on)
tr
td(off)
tf
VGS = 4.5 V,
VDS = 6 V,
ID = 1.0 A,
RG = 6.0 , RL=6,
Total gate charge
Qg VGS = 4.5 V,
Gatesource charge
Qgs
VDS = 10 V,
Gatedrain (“miller”) Charge
Qgd ID = 2.8 A
WFY3P02
Min
-
-
-20
-0.40
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
95
122
6.5
477
80
127
5
19
95
65
5.4
0.8
1.1
Max
±100
-1.0
-
-1.5
130
150
-
-
-
-
-
-
-
8.5
-
-
Unit
nA
μA
V
V
m
S
pF
ns
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = -1.6A, VGS = 0 V
-
Type
-
-
-0.82
Max
-1.6
-7.5
-1.2
Unit
A
A
V
Note 4: Pulse Test: Pulse Width 300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
www.DataSheet.in
Steady, all for your advance









No Preview Available !

WFY3P02 Даташит, Описание, Даташиты
WFY3P02
Fig. 1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 OnResistance vs. Drain Current and
Temperature
Fig.4 Diode Forward Voltage vs. Current
Fig.5 On-Resistance Variation vs Junction
Temperature
Fig.6 Gate Charge Characteristics
3/5
Steady, all for your advance
www.DataSheet.in










Скачать PDF:

[ WFY3P02.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WFY3P0220V P-Channel MOSFETWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск