WFY3P02 PDF даташит
Спецификация WFY3P02 изготовлена «WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «20V P-Channel MOSFET». |
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Детали детали
Номер произв | WFY3P02 |
Описание | 20V P-Channel MOSFET |
Производители | WINSEMI SEMICONDUCTOR |
логотип |
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WFY3P02
−20V, P−Channel MOSFET
,
Features
■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
D
G
S
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
VDSS
ID
PD
ID
PD
IDM
VGS
ESD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(Note 1)
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Gate to Source Voltage
Steady State
t≤10s
Steady State
t≤10s
Steady State
t=10s
Tc=25℃
Tc=85℃
Tc=25℃
Tc=25℃
Tc=25℃
Tc=85℃
Tc=25℃
ESD Capability (Note 3)
C=100pF,RS = 1500Ω
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
-20
−2.8
-1.7
-3.2
0.80
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
W
A
W
A
V
V
℃
℃
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H03F
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P03-3
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current(Note 4)
IGSS VGS = ±8 V, VDS = 0 V
Drain cut−off current(Note 4)
IDSS VDS = -16 V, VGS = 0 V
Drain−source breakdown voltage
V(BR)DSS ID = -250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = VDS, ID =-250 μA
Drain−source ON resistance
RDS(ON)
VGS = −4.5 V, ID = −2.8 A
VGS = −2.5 V, ID = −2.0 A
Forward Transconductance
gfs VDS = −5.0 V, ID = −2.8 A
Input capacitance
Ciss VDS = -6 V,
Reverse transfer capacitance
Crss VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Switching
time
(Note 5)
Turn-on Delay time
Turn−on Rise time
Turn-off Delay time
Turn−off Fall time
td(on)
tr
td(off)
tf
VGS = −4.5 V,
VDS = −6 V,
ID = −1.0 A,
RG = 6.0 Ω, RL=6Ω,
Total gate charge
Qg VGS = −4.5 V,
Gate−source charge
Qgs
VDS = −10 V,
Gate−drain (“miller”) Charge
Qgd ID = −2.8 A
WFY3P02
Min
-
-
-20
-0.40
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
95
122
6.5
477
80
127
5
19
95
65
5.4
0.8
1.1
Max
±100
-1.0
-
-1.5
130
150
-
-
-
-
-
-
-
8.5
-
-
Unit
nA
μA
V
V
mΩ
S
pF
ns
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = -1.6A, VGS = 0 V
-
Type
-
-
-0.82
Max
-1.6
-7.5
-1.2
Unit
A
A
V
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
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WFY3P02
Fig. 1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On−Resistance vs. Drain Current and
Temperature
Fig.4 Diode Forward Voltage vs. Current
Fig.5 On-Resistance Variation vs Junction
Temperature
Fig.6 Gate Charge Characteristics
3/5
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WFY3P02 | 20V P-Channel MOSFET | WINSEMI SEMICONDUCTOR |
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