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Datasheet WFY4101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WFY4101 | Trench Power MOSFET www.DataSheet.in
WFY4101 Trench Power MOSFET
−23 −20 V, Single P−Channel, SOT SOT−
Features
■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated
General Description
|  WINSEMI SEMICONDUCTOR | mosfet |
WFY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFY3N02 | 20V N-Channel MOSFET WFY3N02 20V N−Channel MOSFET
Features
■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced MOS tech WINSEMI SEMICONDUCTOR mosfet | | |
| 2 | WFY3P02 | 20V P-Channel MOSFET WFY3P02 −20V, P−Channel MOSFET
,
Features
■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advan WINSEMI SEMICONDUCTOR mosfet | | |
| 3 | WFY4101 | Trench Power MOSFET www.DataSheet.in
WFY4101 Trench Power MOSFET
−23 −20 V, Single P−Channel, SOT SOT−
Features
■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated
General Description
WINSEMI SEMICONDUCTOR mosfet | |
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