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PDF WFP650 Data sheet ( Hoja de datos )
| Número de pieza | WFP650 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
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WFP650
Features
� 28A, 200v, RDS(on)=0.085Ω @VGS=10V
� Low gate charge (typical 95 nC)
� Low crss (typical 75 pF)
� Fast switching
� 100% avalanche tested
� Improved dv/dt capability
Silicon N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary ,
planar,DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance , provide superior switching
Performance , and with stand high energy pulse in the
avalanche and commutation mode.These devices are well
suited for high efficiency switching DC/DC converters,
Switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Absolute Maximum Ratings
Symbol Parameter
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous(TC=25℃)
-Continuous(TC=100℃)
IDM Drain Current -Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ,TSTG
TL
Gate-Source Voltage
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation(TC=25℃)
-Derate above25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink
Thermal Resistance,Junction-Ambient
Min
-
-
-
Value
200
28
17.7
112
±30
600
28
15.6
5.5
156
1.25
-55~150
300
Value
Typ
-
0.5
-
Max
0.8
-
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Rev.A Jul.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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WFP650
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| PDF Descargar | [ Datasheet WFP650.PDF ] | |
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