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WFF9N50 PDF даташит

Спецификация WFF9N50 изготовлена ​​​​«WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF9N50
Описание Silicon N-Channel MOSFET
Производители WINSEMI SEMICONDUCTOR
логотип WINSEMI SEMICONDUCTOR логотип 

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WFF9N50 Даташит, Описание, Даташиты
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Features
9A,500V, RDS(on)(Max0.85Ω)@VGS=10V
Ultra-low Gate charge(Typical 30nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFF9N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9
5.1
32
±30
510
13
3.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 2.86 /W
- 0.5 - /W
- - 62.5 /W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.









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WFF9N50 Даташит, Описание, Даташиты
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Electrical Characteristics(Tc=25)
WFF9N50
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
- - ±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 -
-V
Drain cut -off current
VDS=500V,VGS=0V
- - 1 µA
IDSS
VDS=400V,TC=125
10 µA
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
BVDSS/
TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25
500 -
0.57
-V
V/
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2 - 4V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.8A
- - 0.85 Ω
Forward Transconductance
gfs VDS=50V,ID=4.8A
3.7
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 1018 -
- 155 -
-8 -
pF
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=250V,
- 11
-
ton ID=9A
tf RG=9.1Ω
- 23 -
ns
- 26 -
toff
RD=31Ω (Note4,5)
-
19
-
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=400V,
Qg
VGS=10V,
Qgs ID=9A
- 30 38
nC
-79
Gate-drain("miller") Charge
Qgd
(Note4,5) -
15 18
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
- - - 9A
Pulse drain reverse current
IDRP
- - - 32 A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
- 1.4 2.0 V
Reverse recovery time
Reverse recovery charge
trr IDR=9A,VGS=0V,
- 442 633 ns
Qrr
dIDR / dt =100 A / µs
- 2.16 3.24 µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=9A,VDD=50V,RG=0Ω,Starting TJ=25
3.ISD≤9A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7









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WFF9N50 Даташит, Описание, Даташиты
www.DataSheet.in
WFF9N50
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Drain Voltage
Fig.4 Maximum Avalanche Energy
vs On-State Current
Fig.5 On-Resistance Variation vs
Junction temperature
Fig.6 Gate Charge Characteristics
Steady, all for your advance
3/7










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Номер в каталогеОписаниеПроизводители
WFF9N50Silicon N-Channel MOSFETWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR

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