DataSheet26.com

GS880F36BT-5.5 PDF даташит

Спецификация GS880F36BT-5.5 изготовлена ​​​​«GSI Technology» и имеет функцию, называемую «9Mb Sync Burst SRAMs».

Детали детали

Номер произв GS880F36BT-5.5
Описание 9Mb Sync Burst SRAMs
Производители GSI Technology
логотип GSI Technology логотип 

27 Pages
scroll

No Preview Available !

GS880F36BT-5.5 Даташит, Описание, Даташиты
GS880F18/32/36BT-4.5/5/5.5/6.5/7.5
100-Pin TQFP
Commercial Temp
Industrial Temp
512K x 18, 256K x 32, 256K x 36
9Mb Sync Burst SRAMs
www.D4a.5taSnhsee7t4.5U.ncosm
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
Features
• Flow Through mode operation; Pin 14 = No Connect
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
Applications
The GS880F18/32/36BT is a 9,437,184-bit (8,388,608-bit for
x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Designing For Compatibility
The JEDEC standard for Burst RAMS calls for a FT mode pin
option on Pin 14. Board sites for flow through Burst RAMS
should be designed with VSS connected to the FT pin location
to ensure the broadest access to multiple vendor sources.
Boards designed with FT pin pads tied low may be stuffed with
GSI’s pipeline/flow through-configurable Burst RAMs or any
vendor’s flow through or configurable Burst SRAM. Boards
designed with the FT pin location tied high or floating must
employ a non-configurable flow through Burst RAM, like this
RAM, to achieve flow through functionality.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS880F18/32/36BT operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (VDDQ) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Flow Through
2-1-1-1
Paramter Synopsis
-4.5 -5 -5.5 -6.5 -7.5 Unit
tKQ
tCycle
Curr (x18)
Curr (x32/x36)
4.5 5.0 5.5 6.5 7.5 ns
4.5 5.0 5.5 6.5 7.5 ns
200 185 160 140 128 mA
230 210 185 160 145 mA
Rev: 1.02 10/2004
1/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology









No Preview Available !

GS880F36BT-5.5 Даташит, Описание, Даташиты
GS880F18/32/36BT-4.5/5/5.5/6.5/7.5
GS880F18B 100-Pin TQFP Pinout (Package T)
www.DataSheet4U.com
NC
NC
NC
VDDQ
VSS
NC
NC
DQB
DQB
VSS
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSS
DQB
DQB
DQPB
NC
VSS
VDDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 80
2 79
3 78
4 77
5 76
6 75
7 74
8 73
9
10
512K x 18
11 Top View
72
71
70
12 69
13 68
14 67
15 66
16 65
17 64
18 63
19 62
20 61
21 60
22 59
23 58
24 57
25 56
26 55
27 54
28 53
29 52
30 51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
NC
NC
VDDQ
VSS
NC
DQPA
DQA
DQA
VSS
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSS
DQA
DQA
NC
NC
VSS
VDDQ
NC
NC
NC
Rev: 1.02 10/2004
2/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology









No Preview Available !

GS880F36BT-5.5 Даташит, Описание, Даташиты
GS880F18/32/36BT-4.5/5/5.5/6.5/7.5
GS880F32B 100-Pin TQFP Pinout (Package T)
www.DataSheet4U.com
NC
DQC
DQC
VDDQ
VSS
DQC
DQC
DQC
DQC
VSS
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSS
DQD
DQD
DQD
DQD
VSS
VDDQ
DQD
DQD
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 80
2 79
3 78
4 77
5 76
6 75
7 74
8 73
9
10
256K x 32
11 Top View
72
71
70
12 69
13 68
14 67
15 66
16 65
17 64
18 63
19 62
20 61
21 60
22 59
23 58
24 57
25 56
26 55
27 54
28 53
29 52
30 51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQB
DQB
VDDQ
VSS
DQB
DQB
DQB
DQB
VSS
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSS
DQA
DQA
DQA
DQA
VSS
VDDQ
DQA
DQA
NC
Rev: 1.02 10/2004
3/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology










Скачать PDF:

[ GS880F36BT-5.5.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
GS880F36BT-5.59Mb Sync Burst SRAMsGSI Technology
GSI Technology

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск