NTMS4706N PDF даташит
Спецификация NTMS4706N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMS4706N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N−Channel, SO−8
Features
• Low RDS(on)
• Low Gate Charge
• Standard SO−8 Single Package
• Pb−Free Package is Available
Applications
• Notebooks, Graphics Cards
• Synchronous Rectification
• High Side Switch
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t v 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
8.6
6.2
10.3
1.5
t v 10 s
2.2
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
6.4
4.6
0.83
Pulsed Drain Current
tp = 10 ms
IDM 31
Operating Junction and Storage Temperature
TJ, −55 to
Tstg 150
Source Current (Body Diode)
IS 2.1
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A,
L = 10 mH, RG = 25 W)
EAS
150
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260
Unit
V
V
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
83.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
58
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
RDS(ON) TYP
30 V
9.0 mW @ 10 V
11.4 mW @ 4.5 V
ID MAX
(Note 1)
10.3 A
N−Channel
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1
SO−8
CASE 751
STYLE 12
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4706NR2
SO−8 2500/Tape & Reel
NTMS4706NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 3
1
Publication Order Number:
NTMS4706N/D
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NTMS4706N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
TJ = 25°C
VGS = 0 V, VDS = 24 V TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 10.3 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 24 V
VGS = 4.5 V, VDS = 15 V, ID = 10 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 15 V, ID = 1.0 A,
RG = 3.0 W
Forward Diode Voltage
VSD TJ = 25°C
VGS = 0 V, IS = 2.1 A TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 2.1 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
Typ Max Unit
V
21 mV/°C
w1w.0w.DatamSAheet4U.com
50
±100
nA
2.5 V
−4.8 mV/°C
9.0 12 mW
11.4 15
19 S
950 pF
400
100
10 15 nC
1.25
2.4
4.5
1.82 W
7.5 12 ns
4.0 8.0
24 40
14 25
0.74 1.0 V
0.57
34 ns
16
18
29 nC
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NTMS4706N
TYPICAL PERFORMANCE CURVES
30 10 V TJ = 25°C
5V
25 3.2 V
3V
20 2.8 V
15
2.6 V
10
5 2.4 V
2.2 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
35
VDS ≥ 10 V
30
25
20 www.DataSheet4U.com
15
10 TJ = 125°C
5 TJ = 25°C
TJ = −55°C
0
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.03
0.025
0.02
0.015
0.01
TJ = 25°C
ID = 10 A
0.018
TJ = 25°C
0.015
0.012
0.009
VGS = 4.5 V
VGS = 10 V
0.005
1
23 456 789
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10
0.006
2
4
6 8 10 12 14 16
ID, DRAIN CURRENT (AMPS)
18 20
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
ID = 10.3 A
1.6 VGS = 10 V
1.4
10000
VGS = 0 V
1000
TJ = 150°C
1.2
1 100 TJ = 100°C
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
3 6 9 12 15 18 21 24 27 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMS4706N | Power MOSFET ( Transistor ) | ON Semiconductor |
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