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NTLJS2103P PDF даташит

Спецификация NTLJS2103P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLJS2103P
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTLJS2103P Даташит, Описание, Даташиты
NTLJS2103P
Power MOSFET
12 V, 7.7 A, mCoolt Single PChannel,
2x2 mm, WDFN Package
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
2x2 mm Footprint Same as SC88 Package
Lowest RDS(on) Solution in 2x2 mm Package
1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a PbFree Device
Applications
High Side Load Switch
DCDC Converters (Buck and Boost Circuits)
Optimized for Battery and Load Management Applications in
Portable Equipment
LiIon Battery Linear Mode Charging
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
12
±8.0
5.9
4.2
7.7
1.9
3.3
3.5
2.5
0.7
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
24
55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 2.7 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
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V(BR)DSS
12 V
RDS(on) TYP
25 mW @ 4.5 V
35 mW @ 2.5 V
45 mW @ 1.8 V
60 mW @ 1.5 V
95 mW @ 1.2 V
S
ID MAX (Note 1)
5.9 A
5.3 A
2.0 A
1.0 A
0.2 A
G
PCHANNEL MOSFET
S
Pin 1
D
D
MARKING
DIAGRAM
WDFN6
CASE 506AP
1
2
J7MG
6
5
3G 4
J7 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
6D
D2
G3
D
S
5D
4S
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NTLJS2103PTAG WDFN6 3000/Tape & Reel
(PbFree)
NTLJS2103PTBG WDFN6 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
July, 2009 Rev. 2
1
Publication Order Number:
NTLJS2103P/D









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NTLJS2103P Даташит, Описание, Даташиты
NTLJS2103P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – t 5 s (Note 3)
RqJA
JunctiontoAmbient – Steady State Min Pad (Note 4)
RqJA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, Ref to 25°C
12
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VDS = 12 V, VGS = 0 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
0.3
DraintoSource OnResistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 4.5, ID = 5.9 A
VGS = 4.5, ID = 3.0 A
VGS = 2.5, ID = 5.3 A
VGS = 2.5, ID = 3.0 A
VGS = 1.8, ID = 2.0 A
VGS = 1.5, ID = 1.0 A
VGS = 1.2, ID = 200 mA
VDS = 6.0 V, ID = 2.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = 6.0 V
VGS = 4.5 V, VDS = 9.6 V,
ID = 5.9 A
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 8.0 V,
ID = 5.9 A, RG = 2.0 W
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 1.0 A
TJ = 25°C
TJ = 85°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max Unit
65
38 °C/W
180
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Typ Max Unit
V
8.0 mV/°C
1.0 mA
5.0
±0.1 mA
0.8 V
2.6 mV/°C
25 40 mW
25 40
35 50
35 50
45 75
60 100
95 400
8.8 S
1157
300
200
12.8
0.4
1.6
3.6
15.7
15
pF
nC
W
8.0 ns
27
74
88
0.62 1.0
0.56
27 50
10
17
14
V
ns
nC
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NTLJS2103P Даташит, Описание, Даташиты
NTLJS2103P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
VGS = 4.5 V
TJ = 25°C
16 2.5 V
2 V
1.8 V
12
1.5 V
8
4
1.0 V
1.1 V
1.2 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
20
18 VDS = 5 V
16
14
12 www.DataSheet4U.com
10
8
6
4 TJ = 25°C
2 TJ = 125°C
0
TJ = 55°C
0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.20
0.18
0.16
0.14
ID = 5.9 A
TJ = 25°C
0.12
0.10
0.08
0.06
0.04
0.02
ID = 0.2 A
0.00
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.20
0.18
1.2 V
0.16
TJ = 25°C
0.14
0.12
VGS = 1.5 V
VGS = 1.8 V
0.10
0.08
0.06
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
0.00
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.5
1.4
VGS = 4.5 V
ID = 5.9 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
100000
VGS = 0 V
10000
TJ = 150°C
TJ = 125°C
150 10002 4 6 8 10 12
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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