NTLJS2103P PDF даташит
Спецификация NTLJS2103P изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTLJS2103P |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTLJS2103P
Power MOSFET
−12 V, −7.7 A, mCoolt Single P−Channel,
2x2 mm, WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88 Package
• Lowest RDS(on) Solution in 2x2 mm Package
• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• High Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Linear Mode Charging
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
−12
±8.0
−5.9
−4.2
−7.7
1.9
3.3
−3.5
−2.5
0.7
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
−24
−55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS −2.7 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
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V(BR)DSS
−12 V
RDS(on) TYP
25 mW @ −4.5 V
35 mW @ −2.5 V
45 mW @ −1.8 V
60 mW @ −1.5 V
95 mW @ −1.2 V
S
ID MAX (Note 1)
−5.9 A
−5.3 A
−2.0 A
−1.0 A
−0.2 A
G
P−CHANNEL MOSFET
S
Pin 1
D
D
MARKING
DIAGRAM
WDFN6
CASE 506AP
1
2
J7MG
6
5
3G 4
J7 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
6D
D2
G3
D
S
5D
4S
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NTLJS2103PTAG WDFN6 3000/Tape & Reel
(Pb−Free)
NTLJS2103PTBG WDFN6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
July, 2009 − Rev. 2
1
Publication Order Number:
NTLJS2103P/D
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NTLJS2103P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
ID = −250 mA, Ref to 25°C
−12
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VDS = −12 V, VGS = 0 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
−0.3
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = −4.5, ID = −5.9 A
VGS = −4.5, ID = −3.0 A
VGS = −2.5, ID = −5.3 A
VGS = −2.5, ID = −3.0 A
VGS = −1.8, ID = −2.0 A
VGS = −1.5, ID = −1.0 A
VGS = −1.2, ID = −200 mA
VDS = −6.0 V, ID = −2.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = −6.0 V
VGS = −4.5 V, VDS = −9.6 V,
ID = −5.9 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −8.0 V,
ID = −5.9 A, RG = 2.0 W
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = −1.0 A
TJ = 25°C
TJ = 85°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max Unit
65
38 °C/W
180
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Typ Max Unit
V
−8.0 mV/°C
−1.0 mA
−5.0
±0.1 mA
−0.8 V
2.6 mV/°C
25 40 mW
25 40
35 50
35 50
45 75
60 100
95 400
8.8 S
1157
300
200
12.8
0.4
1.6
3.6
15.7
15
pF
nC
W
8.0 ns
27
74
88
0.62 1.0
0.56
27 50
10
17
14
V
ns
nC
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NTLJS2103P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
VGS = −4.5 V
TJ = 25°C
16 −2.5 V
−2 V
−1.8 V
12
−1.5 V
8
4
−1.0 V
−1.1 V
−1.2 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
20
18 VDS = −5 V
16
14
12 www.DataSheet4U.com
10
8
6
4 TJ = 25°C
2 TJ = 125°C
0
TJ = −55°C
0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.20
0.18
0.16
0.14
ID = −5.9 A
TJ = 25°C
0.12
0.10
0.08
0.06
0.04
0.02
ID = −0.2 A
0.00
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.20
0.18
−1.2 V
0.16
TJ = 25°C
0.14
0.12
VGS = −1.5 V
VGS = −1.8 V
0.10
0.08
0.06
0.04
VGS = −2.5 V
0.02
VGS = −4.5 V
0.00
0 2 4 6 8 10 12 14 16 18 20
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.5
1.4
VGS = −4.5 V
ID = −5.9 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
VGS = 0 V
10000
TJ = 150°C
TJ = 125°C
150 10002 4 6 8 10 12
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTLJS2103P | Power MOSFET ( Transistor ) | ON Semiconductor |
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