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Número de pieza | NTLGF3402P | |
Descripción | Power MOSFET and Schottky Diode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTLGF3402P
Power MOSFET and
Schottky Diode
−20 V, −3.9 A FETKY), P−Channel,
2.0 A Schottky Barrier Diode, DFN6
Features
• Flat Lead 6 Terminal Package 3x3x1 mm
• Enhanced Thermal Characteristics
• Low VF and Low Leakage Schottky Diode
• Reduced Gate Charge to Improve Switching Response
• This is a Pb−Free Device
Applications
• Buck Converter
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
t ≤ 10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±12
−2.7
−2.0
−3.9
1.6
3.0
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−2.3 A
−1.7
1.14 W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
11
−55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 1.1 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.5 in sq).
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V(BR)DSS
−20 V
MOSFET
RDS(on) TYP
110 mW @ −4.5 V
ID MAX
−3.9 A
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.36 V
IF MAX
2.0 A
25
123
3
Heatsink
1
4
6
654
1, 6 = Anode
2, 5 = Source
3 = Gate
4 = Drain/Cathode
MARKING
DIAGRAMS
1 3402
DFN6
AYWW
1
CASE 506AH
G
3402
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTLGF3402PT1G DFN6 3000 / Tape & Reel
(Pb−Free)
NTLGF3402PT2G DFN6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTLGF3402P/D
1 page NTLGF3402P
TYPICAL P−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
700
VDS = 0 V VGS = 0 V
600
CISS
500
400
300
TJ = 25°C
6
4 −VDS
QGS
QT
QGD
12
10
−VGS
8
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6
200 CRSS
2
4
COSS
100
ID = −2.7 A 2
TJ = 25°C
00
10 5 0 5 10 15 20 0
−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
0
1234
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100 10
tf
td(off)
VGS = 0 V
tr
TJ = 100°C TJ = 25°C
10 1
td(on)
TJ = 150°C
VDS = −16 V
ID = −2.7 A
VGS = −4.5 V
1
1
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
TJ = −55°C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1
Figure 11. FET Thermal Response
10 100 1000
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Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTLGF3402P.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTLGF3402P | Power MOSFET and Schottky Diode | ON Semiconductor |
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