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Número de pieza | NTJS3157N | |
Descripción | Trench Power MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life
• Fast Switching for Increased Circuit Efficiency
• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Pb−Free Packages are Available
Applications
• DC−DC Conversion
• Low Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 25 °C
VDSS
VGS
ID
PD
20
±8.0
3.2
2.3
4.0
1.0
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TTSJT,G
IS
TL
10
−55 to
150
1.6
260
Unit
V
V
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
RqJA
125 °C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
80
Junction−to−Lead – Steady State
RqJL
45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
www.DataSheet4U.com
V(BR)DSS
20 V
http://onsemi.com
RDS(on) Typ
45 mW @ 4.5 V
55 mW @ 2.5 V
70 mW @ 1.8 V
ID Max
4.0 A
SC−88 (SOT−363)
D1
6D
D2
5D
G3
4S
Top View
1
SOT−363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
DDS
6
T92 M G
G
1
DDG
T92 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
NTJS3157N/D
1 page NTJS3157N
ORDERING INFORMATION
Device
Package
Shipping†
NTJS3157NT1
SC−88
3000 Tape & Reel
NTJS3157NT1G
SC−88
(Pb−Free)
3000 Tape & Reel
NTJS3157NT2
NTJS3157NT2G
SC−88
SC−88
(Pb−Free)
3000 Tape & Reel
3000 Tape & Rweewl w.DataSheet4U.com
NTJS3157NT4
SC−88
10,000 Tape & Reel
NTJS3157NT4G
SC−88
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
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NTJS3157N | Trench Power MOSFET | ON Semiconductor |
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