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NTGS3441B PDF даташит

Спецификация NTGS3441B изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTGS3441B
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTGS3441B Даташит, Описание, Даташиты
NTGS3441B
Power MOSFET
-20 V, -3.5 A, Single P-Channel, TSOP-6
Features
ăLow RDS(on) in TSOP-6 Package
ă2.5 V Gate Rating
ăThis is a Pb-Free Device
Applications
ăBattery Switch and Load Management Applications in Portable
Equipment
ăHigh Side Load Switch
ăPortable Devices like Games and Cell Phones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
-20
$8
-3.0
-2.4
-3.5
1.1
V
V
A
W
tv5s
1.6
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
-2.2 A
-1.8
0.7 W
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
TL
-12
-55 to
150
260
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq).
©Ă Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1
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V(BR)DSS
-20 V
RDS(on) MAX
90 mW @ -4.5 V
130 mW @ -2.5 V
ID MAX
-3.0 A
-2.4 A
P-Channel
1256
3
4
MARKING
DIAGRAM
TSOP-6
CASE 318G
SF MG
1 STYLE 1
G
1
SF = Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
NTGS3441BT1G TSOP-6 3000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGS3441B/D









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NTGS3441B Даташит, Описание, Даташиты
NTGS3441B
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction-to-Ambient – Steady State (Note 3)
RqJA
Junction-to-Ambient – t v 5 s (Note 3)
RqJA
Junction-to-Ambient – Minimum Pad (Note 4)
RqJA
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
Value
110
80
190
Unit
°C/W
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = -250 mA
VGS = 0 V,
VDS = -20 V
TJ = 25°C
TJ = 70°C
VDS = 0 V, VGS = ±8 V
Gate Threshold Voltage
Drain-to-Source On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = -250 mA
VGS = -4.5 V, ID = -3.0 A
VGS = -2.5 V, ID = -2.4 A
VDS = -10 V, ID = -3.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 0 V, f = 1 MHz, VDS = -10 V
VGS = -4.5 V, VDS = -10 V;
ID = -3.0 A
VGS = -4.5 V, VDS = -10 V,
ID = -1.0 A, RG = 6.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = -1.6 A
Reverse Recovery Time
tRR VGS = 0 V, dISD/dt = 100 A/ms,
IS = -1.6 A
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
Min Typ Max Unit
-20 V
-1.0 mA
-5.0
$0.1 mA
-0.4 -0.9
59 90
79 130
5.8
V
mW
S
630
93
49
6.1 9.0
0.5
1.0
1.4
pF
nC
8.0 13
6.0 10
40 64
33 53
ns
-0.8 -1.2
12 24
V
ns
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NTGS3441B Даташит, Описание, Даташиты
NTGS3441B
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
VGS = -4.5 V
16
-3.5 V
-4 V
TJ = 25°C
-3 V
20
VDS = -5 V
16
12 -2.5 V
8
-2 V
4
-1.5 V
0
0123 45
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
0.30
0.24
ID = -3 A
TJ = 25°C
12 www.DataSheet4U.com
8
4 TJ = 25°C
TJ = 125°C
0 TJ = -55°C
0.5 1 1.5 2
2.5
3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.30
TJ = 25°C
0.24
0.18 0.18
0.12
0.12
VGS = -2.5 V
0.06
0.00
1
1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
5
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
0.06
VGS = -4.5 V
0.00
0 4 8 12 16 20
-ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.5
1.4
ID = -3 A
VGS = -4.5 V
1.3
1.2
1.1
1.0
1000
800
Ciss
600
400
VGS = 0 V
TJ = 25°C
f = 1 MHz
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
150
200 Coss
0 Crss
0 2 4 6 8 10 12 14 16 18 20
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
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