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NTGD4169F PDF даташит

Спецификация NTGD4169F изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET and Schottky Diode».

Детали детали

Номер произв NTGD4169F
Описание Power MOSFET and Schottky Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTGD4169F Даташит, Описание, Даташиты
NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, NChannel with Schottky
Barrier Diode, TSOP6
Features
Fast Switching
Low Gate Change
Low RDS(on)
Low VF Schottky Diode
Independently Connected Devices to Provide Design Flexibility
This is a PbFree Device
Applications
DCDC Converters
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
NChannel
Continuous Drain
Current (Note 1)
Steady State
t5 s
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
30
±12
2.6
1.9
2.9
Power Dissipation Steady State TA = 25°C
(Note 1)
t5 s
PD
0.9
1.1
Unit
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
8.6
25 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 0.9 A
TL 260 °C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM 30 V
DC Blocking Voltage
VR 30 V
Average Rectified Forward Current
IF 1 A
THERMAL RESISTANCE RATINGS
Parameter
JunctiontoAmbient – Steady State (Note
1)
Symbol
RqJA
Value
140
Unit
°C/W
JunctiontoAmbient – t 5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 1
1
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http://onsemi.com
NCHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
30 V
90 mW @ 4.5 V
125 mW @ 2.5 V
2.6 A
2.2 A
VR Max
30 V
SCHOTTKY DIODE
VF Max
0.53 V
IF Max
1.0 A
DA
G
S
NChannel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP6
CASE 318G
STYLE 15
TD MG
G
1
TD = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
6K
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTGD4169F/D









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NTGD4169F Даташит, Описание, Даташиты
NTGD4169F
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V
ID = 2.6 A
VGS = 2.5 V
ID = 2.2 A
VDS = 15 V, ID = 2.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
VGS = 4.5 V, VDS = 15 V,
ID = 2.0 A
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINTOSOURCE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
VSD
VGS = 0 V
IS = 0.9 A
TJ = 25°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Ta VGS = 0 V, dIS/dt = 100 A/ms,
Tb IS = 0.9 A
Reverse Recovery Time
QRR
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
30
21.4
V
mV/°C
w11w.00w.DatamSAheet4U.com
100 nA
0.5 0.9
1.5
V
3.4
mV/°C
52 90
67 125 mW
2.6 S
295
48
27
3.7 5.5
0.6
0.9
0.8
pF
nC
7.0
4.0
14
ns
2.0
0.7 1.2
V
8.0
5.0 ns
3.0
3.0 nC
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NTGD4169F Даташит, Описание, Даташиты
NTGD4169F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.5 A
IF = 1.0 A
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
VR = 20 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
0.41 0.45
0.46 0.53
V
7.3 20 mA
2.5 8.0
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Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.5 A
IF = 1.0 A
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
VR = 20 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
0.35
0.41
0.4
0.17
V
mA
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.5 A
IF = 1.0 A
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
VR = 20 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
0.31
0.39
4.4
1.6
V
mA
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Capacitance
C VR = 10 V, f = 1.0 MHz
28 pF
ORDERING INFORMATION
Device
Package
Shipping
NTGD4169FT1G
TSOP6
(PbFree)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NTGD4169FPower MOSFET and Schottky DiodeON Semiconductor
ON Semiconductor

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