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PDF NTGD4167C Data sheet ( Hoja de datos )
| Número de pieza | NTGD4167C | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/−2.2 A,
TSOP−6 Dual
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size (3 x 3 mm) Dual TSOP−6 Package
• Leading Edge Trench Technology for Low On Resistance
• Reduced Gate Charge to Improve Switching Response
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Conversion Circuits
• Load/Power Switching with Level Shift
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage (N−Ch & P−Ch)
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
Steady State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
ID
PD
30
±12
2.6
1.9
2.9
−1.9
−1.4
−2.2
0.9
1.1
Pulsed Drain
Current
N−Ch
P−Ch
tp = 10 ms
IDM
8.6
−6.3
Operating Junction and Storage Temperature TJ, TSTG −55 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS ±0.9
TL 260
Unit
V
V
A
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1) RqJA
140 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
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http://onsemi.com
V(BR)DSS
N−Ch
30 V
P−Ch
−30 V
RDS(on) MAX
90 mW @ 4.5 V
125 mW @ 2.5 V
170 mW @ −4.5 V
300 mW @ −2.5 V
ID MAX (Note 1)
2.6 A
2.2 A
−1.9 A
−1.0 A
D1 D2
G1 G2
S1 S2
N−CHANNEL MOSFET P−CHANNEL MOSFET
1
TSOP−6
CASE 318G
STYLE 13
MARKING
DIAGRAM
TA MG
G
1
TA = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
1
Publication Order Number:
NTGD4167C/D
1 page  
NTGD4167C
5
4
3
2 QGS
QT
VDS
QGD
VGS
16
14
12
10
8
6
1
ID = 2.0 A
TJ = 25°C
VDS = 15 V
4
2
00
01234
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1.2
1.1 ID = 250 mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−50
−25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Threshold Voltage
150
100
VGS = 12 V
Single Pulse
10 TA = 25°C
1
10
1.0 TJ = 150°C
TJ = 25°C www.DataSheet4U.com
0.1
0.3
40
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage versus
Current
1.1
30
20
10
0
0.001 0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (s)
Figure 10. Single Pulse Maximum Power
Dissipation
100 ms
1 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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