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PDF NTD5803N Data sheet ( Hoja de datos )
| Número de pieza | NTD5803N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• CCFL Backlight
• DC Motor Control
• Class D Amplifier
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
(CNuortreen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
76
54
83
228
−55 to
175
Unit
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 76 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
1.8 °C/W
64
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
10.1 mW @ 5.0 V
7.2 mW @ 10 V
D
ID MAX
54 A
76 A
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1 23
DPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y = Year
WW = Work Week
5803N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
1
Publication Order Number:
NTD5803N/D
1 page  
NTD5803N
B
VR
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
SEATING
PLANE
C
E
S
F
4
1 23
A
K
Z
U
J
LH
D 2 PL
G 0.13 (0.005) M T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
6.172
0.243
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.180 0.215
S 0.025 0.040
U 0.020 −−−
V 0.035 0.050
Z 0.155 −−−
MwILwLIMwE.TDERaStaSheet4U.com
MIN MAX
5.97 6.22
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.57 5.45
0.63 1.01
0.51 −−−
0.89 1.27
3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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