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NTD5806N PDF даташит

Спецификация NTD5806N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD5806N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD5806N Даташит, Описание, Даташиты
NTD5806N
Power MOSFET
40 V, 33 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are PbFree Devices
Applications
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage
NonRepetitive (tp < 10 mS)
Continuous Drain
(CNuortreen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
33
23
40
67
55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 33 A
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
EAS
39 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase (Drain)
RqJC
JunctiontoAmbient Steady State (Note 1) RqJA
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
3.7 °C/W
57.5
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V(BR)DSS
40 V
RDS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
ID MAX
33 A
G
S
NCHANNEL MOSFET
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1 23
IPAK
CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y = Year
WW = Work Week
5806N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 3
1
Publication Order Number:
NTD5806N/D









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NTD5806N Даташит, Описание, Даташиты
NTD5806N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VVDGSS
=
=
0 V,
40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 20 V,
ID = 30 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
VGS = 10 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 150°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.4
Typ Max Unit
45.5 V
29.5 mV/°C
w1.w0 w.DatamSAheet4U.com
100
±100
nA
2.5 V
5.8 mV/°C
12.7 19 mW
17.8 26
860 pF
130
100
17 38 nC
0.95
3.4
4.5
10.6 ns
93.7
14.2
4.3
8.0 ns
49
19.8
2.6
0.86 1.2
V
0.69
18.8 ns
11.8
7.0
10.9 nC
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NTD5806N Даташит, Описание, Даташиты
NTD5806N
TYPICAL CHARACTERISTICS
70
10 V
60
TJ = 25°C
4.5 V
50 VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
40
4.0 V
30
20
3.5 V
10
0
0 0.5 1 1.5
2 2.5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
3
70
60 VDS 10 V
50
40 www.DataSheet4U.com
30
20 TJ = 100°C
TJ = 25°C
10
0 TJ = 55°C
23
4
5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.021
0.019
ID = 15 A
TJ = 25°C
0.05
0.04
TJ = 25°C
0.017
0.015
0.03
0.02
VGS = 4.5 V
0.013
0.01
VGS = 10 V
0.011
0
4 5 6 7 8 9 10
10 20 30 40 50 60 70
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. Drain Current
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
2.0
1.9
1.8
1.7
ID = 30 A
VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50 25
0
10,000
VGS = 0 V
1000
100
25 50 75 100 125 150 175
10
2
12
TJ = 150°C
TJ = 100°C
22
32
42
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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NTD5806NPower MOSFET ( Transistor )ON Semiconductor
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