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PDF NTD5865N Data sheet ( Hoja de datos )
| Número de pieza | NTD5865N | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTD5865N
N-Channel Power MOSFET
60 V, 43 A, 18 mW
Features
• Low Gate Charge
• Fast Switching
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
Continuous Drain
Current (RqJC)
Power Dissipation
(RqJC)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
±20
±30
43
31
71
192
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 43 A
Single Pulse Drain−to−Source L = 0.1 mH
Avalanche Energy
EAS
IAS
36 mJ
27 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value
Junction−to−Case (Drain)
RqJC
2.1
Junction−to−Ambient − Steady State (Note 1) RqJA
49
1. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
Unit
°C/W
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
18 mW @ 10 V
ID MAX
43 A
D
N−Channel
G
S
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5865N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 3
1
Publication Order Number:
NTD5865N/D
1 page  
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
NTD5865N
0.0001
0.001
t, PULSE TIME (s)
Figure 12. Thermal Response
0.01
0.1
1
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5865N−1G
IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5865NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD5865N.PDF ] | |
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