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PDF NTD5865NL Data sheet ( Hoja de datos )
| Número de pieza | NTD5865NL | |
| Descripción | N-Channel Power MOSFET 60 V / 40 A / 16 m ome | |
| Fabricantes | ON Semiconductor | |
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NTD5865NL
N- Channel Power MOSFET
60 V, 40 A, 16 mΩ
Features
Low Gate Charge
Fast Switching
High Current Capability
100% Avalanche Tested
These Devices are Pb--Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain--to--Source Voltage
Gate--to--Source Voltage -- Continuous
Gate--to--Source Voltage
-- Non--Repetitive (tp < 10 ms)
Continuous Drain
Current (RθJC)
Power Dissipation
(RθJC)
Steady
State
TC = 25C
TC = 100C
TC = 25C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
20
30
40
26
52
137
-- 55 to
150
V
V
V
A
W
A
C
Source Current (Body Diode)
IS 40 A
Single Pulse Drain--to--Source
Avalanche Energy
(L =
0.1 mH)
EAS
IAS
36 mJ
27 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL 260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction--to--Case (Drain)
RθJC
Junction--to--Ambient -- Steady State (Note 1) RθJA
1. Surface--mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value
2.4
42
Unit
C/W
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
16 mΩ @ 10 V
19 mΩ @ 4.5 V
ID MAX
40 A
D
G
S
N--CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1 23
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y = Year
WW = Work Week
5865NL = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 1
1
Publication Order Number:
NTD5865NL/D
1 page  
10
Duty Cycle = 0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
NTD5865NL
TYPICAL CHARACTERISTICS
0.0001
0.001
t, PULSE TIME (s)
Figure 13. Thermal Response
0.01
www.DataSheet4U.com
0.1 1
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD5865NL.PDF ] | |
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