NTD5867NL PDF даташит
Спецификация NTD5867NL изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET 60 V / 20 A / 39 m ome». |
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Детали детали
Номер произв | NTD5867NL |
Описание | N-Channel Power MOSFET 60 V / 20 A / 39 m ome |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
Continuous Drain
Current (RqJC)
Power Dissipation
(RqJC)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
"20
"30
20
13
36
76
−55 to
150
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 20 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C)
EAS
18 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value
3.5
45
Unit
°C/W
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http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
39 mW @ 10 V
50 mW @ 4.5 V
ID MAX
20 A
18 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1 23
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y = Year
WW = Work Week
5867NL = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 0
1
Publication Order Number:
NTD5867NL/D
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NTD5867NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 100 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
RG
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS
=
10
ID
V,
=
2V0DAS
=
48
V,
VGS = 4.5 V, VDS = 48 V,
ID = 20 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = 10 V, VDD = 48 V,
ID = 20 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 100°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 20 A
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
V
60 mV/°C
w1w.0w.DatamSAheet4U.com
100
±100
nA
1.8 2.5 V
5.2 mV/°C
26 39 mW
33 50
8.0 S
675 pF
68
47
15 nC
1.0
2.2
4.3
7.6 nC
1.3 W
6.5 ns
12.6
18.2
2.4
0.87 1.2
V
0.78
17 ns
13
4.0
12 nC
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5867NL−1G
IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5867NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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NTD5867NL
TYPICAL PERFORMANCE CURVES
40
10V
35
4.5 V
TJ = 25°C
4V
30
3.8 V
25
3.6 V
20
15 3.4 V
10 3.2 V
3.0 V
5
00
12
3
2.8 V
45
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
35 VDS ≥ 10 V
30
25 www.DataSheet4U.com
20
15 TJ = 125°C
10 TJ = 25°C
5
02
TJ = −55°C
3
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
0.060
0.050
ID = 20 A
TJ = 25°C
0.040
TJ = 25°C
0.035
VGS = 4.5 V
0.040
0.030
0.030
0.025
VGS = 10 V
0.020 3
45
67
8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.020 5
10 15
20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
2.0
ID = 20 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 150°C
100 TJ = 125°C
10
150 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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NTD5867NL | N-Channel Power MOSFET 60 V / 20 A / 39 m ome | ON Semiconductor |
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