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NTP60N06L PDF даташит

Спецификация NTP60N06L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET 60 Amps / 60 Volts Logic Level».

Детали детали

Номер произв NTP60N06L
Описание Power MOSFET 60 Amps / 60 Volts Logic Level
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP60N06L Даташит, Описание, Даташиты
NTP60N06L, NTB60N06L
Power MOSFET
60 Amps, 60 Volts,
Logic Level
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
60
60
"15
"20
Vdc
Vdc
Vdc
60 Adc
42.3
180 Apk
150 W
1.0 W/°C
2.4 W
Operating and Storage Temperature Range
TJ, Tstg −55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 5.0 Vdc,
L = 0.3 mH, IL(pk) = 55 A,VDS = 60 Vdc)
Thermal Resistance,
− Junction−to−Case
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
TL
454 mJ
°C/W
1.0
62.5
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1
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http://onsemi.com
60 AMPERES, 60 VOLTS
RDS(on) = 16 mW
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
12
3 D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx60N06LG
AYWW
NTx
60N06LG
AYWW
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
NTx60N06L
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTP60N06L/D









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NTP60N06L Даташит, Описание, Даташиты
NTP60N06L, NTB60N06L
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ =150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IDSS
IGSS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 5.0 Vdc, ID = 30 Adc)
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 5.0 Vdc, ID = 60 Adc)
(VGS = 5.0 Vdc, ID = 30 Adc, TJ = 150°C)
Forward Transconductance (Note 2) (VDS = 8.0 Vdc, ID = 12 Adc)
RDS(on)
VDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 48 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 2)
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc) (Note 2)
td(on)
tr
td(off)
tf
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(IS = 60 Adc, VGS = 0 Vdc) (Note 2)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 150°C)
(IS = 60 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
VSD
trr
ta
tb
QRR
Min Typ Max Unit
60 72.8
− 75.2
Vdc
− mV/°C
mAdc
− − 1w.0ww.DataSheet4U.com
− − 10
± 100
nAdc
1.0 1.58
− 5.4
Vdc
2.0
− mV/°C
− 12.4 16
mW
Vdc
0.793
1.17
− 0.861
− 48
− mhos
2195
3075
pF
− 675 945
− 188 380
− 50.4 100
ns
− 576 1160
− 100 200
− 237 480
− 43.2 65
nC
− 6.4
− 29
− 0.98 1.05 Vdc
− 0.86
− 81.9
ns
− 42.1
− 39.8
− 0.172
mC
ORDERING INFORMATION
Device
Package
Shipping
NTP60N06L
TO−220AB
50 Units / Rail
NTP60N06LG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB60N06L
NTB60N06LG
D2PAK
D2PAK
(Pb−Free)
50 Units / Rail
50 Units / Rail
NTB60N06LT4
NTB60N06LT4G
D2PAK
D2PAK
(Pb−Free)
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2









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NTP60N06L Даташит, Описание, Даташиты
NTP60N06L, NTB60N06L
120
8V
100 6 V
5V
80
60
40
VGS = 10 V
4.5 V
4V
3.5 V
20
3V
00 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
120
VDS 10 V
100
80
60
www.DataSheet4U.com
40
TJ = 25°C
20
TJ = 100°C
TJ = −55°C
0
12
34
56
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.03
0.026
VGS = 5 V
0.03
0.026
VDGS = 510VV
0.022
TJ = 100°C
0.022
0.018
0.014
0.01
TJ = 25°C
TJ = −55°C
0.006 0
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 3. On−Resistance versus Gate−to−Source
Voltage
0.018
TJ = 100°C
0.014
0.01
0.006 0
TJ = 25°C
TJ = −55°C
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 30 A
1.8 VGS = 5 V
10,000
VGS = 0 V
TJ = 150°C
1.6
1000
1.4 TJ = 125°C
1.2
100
1 TJ = 100°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
10
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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