NVD5803N PDF даташит
Спецификация NVD5803N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVD5803N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVD5803N
Power MOSFET
40 V, 85 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC Motor Drive
• Reverse Battery Protection
• Glow Plug
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
C(Nuorrteen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
85
61
83
228
−55 to
175
V
V
A
W
A
°C
Source Current (Body Diode)
IS 85 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
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Value
1.8
42
Unit
°C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
5.7 mW @ 10 V
D
ID MAX
85 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5803N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Publication Order Number:
NVD5803N/D
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NVD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 50 A
VGS = 5.0 V, ID = 30 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 20 V,
ID = 50 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 32 V,
ID = 50 A, RG = 2.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 150°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ Max Unit
V
40 mV/°C
1.0
100
±100
mA
nA
−7.4
4.9
6.7
13.6
3.5 V
mV/°C
5.7 mW
S
3220
390
270
51
3.8
12.7
12.7
pF
nC
12.6 ns
21.4
28.3
6.6
0.88 1.2
V
0.73
27.2 ns
14
13.2
17 nC
ORDERING INFORMATION
www.DataSheet4U.com
Order Number
Package
Shipping†
NVD5803NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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NVD5803N
TYPICAL CHARACTERISTICS
160
140 10 V
120
TJ = 25°C
VGS = 5 V
4.8 V
100 4.6 V
80 4.4 V
60 4.2 V
40 4.0 V
20 3.8 V
0 3.6 V
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
160
140 VDS ≥ 10 V
120
100
80
60
40 TJ = 25°C
20
TJ = 125°C
TJ = −55°C
0
2345
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.010
0.008
0.006
ID = 50 A
TJ = 25°C
0.008
0.007
TJ = 25°C
0.006
0.005
VGS = 5 V
VGS = 10 V
6
0.004
0.004
2 4 6 8 10 5 20 35 50 65 80
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 50 A
1.6 VGS = 10 V
1.5
1.4
1.3
100000
VGS = 0 V
10000
TJ = 150°C
1.2
1.1
1000
TJ = 125°C
1.0
0.9
w w w . D a00t..78a S h e e t 4 U . c o m
−55 −35 −15 5 25 45 65 85 105 125 145 165
100
5
10 15 20 25 30 35 40
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVD5803N | Power MOSFET ( Transistor ) | ON Semiconductor |
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