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NVD5803N PDF даташит

Спецификация NVD5803N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5803N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5803N Даташит, Описание, Даташиты
NVD5803N
Power MOSFET
40 V, 85 A, Single NChannel, DPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AECQ101 Qualified
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC Motor Drive
Reverse Battery Protection
Glow Plug
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Continuous Drain
C(Nuorrteen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
85
61
83
228
55 to
175
V
V
A
W
A
°C
Source Current (Body Diode)
IS 85 A
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctiontoCase (Drain)
RqJC
JunctiontoAmbient Steady State (Note 1) RqJA
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
www.DataSheet4U.com
Value
1.8
42
Unit
°C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
5.7 mW @ 10 V
D
ID MAX
85 A
G
S
NCHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5803N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 Rev. 0
1
Publication Order Number:
NVD5803N/D









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NVD5803N Даташит, Описание, Даташиты
NVD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 50 A
VGS = 5.0 V, ID = 30 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 20 V,
ID = 50 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 32 V,
ID = 50 A, RG = 2.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 150°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ Max Unit
V
40 mV/°C
1.0
100
±100
mA
nA
7.4
4.9
6.7
13.6
3.5 V
mV/°C
5.7 mW
S
3220
390
270
51
3.8
12.7
12.7
pF
nC
12.6 ns
21.4
28.3
6.6
0.88 1.2
V
0.73
27.2 ns
14
13.2
17 nC
ORDERING INFORMATION
www.DataSheet4U.com
Order Number
Package
Shipping
NVD5803NT4G
DPAK
(PbFree)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2









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NVD5803N Даташит, Описание, Даташиты
NVD5803N
TYPICAL CHARACTERISTICS
160
140 10 V
120
TJ = 25°C
VGS = 5 V
4.8 V
100 4.6 V
80 4.4 V
60 4.2 V
40 4.0 V
20 3.8 V
0 3.6 V
012345
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
160
140 VDS 10 V
120
100
80
60
40 TJ = 25°C
20
TJ = 125°C
TJ = 55°C
0
2345
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.010
0.008
0.006
ID = 50 A
TJ = 25°C
0.008
0.007
TJ = 25°C
0.006
0.005
VGS = 5 V
VGS = 10 V
6
0.004
0.004
2 4 6 8 10 5 20 35 50 65 80
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 50 A
1.6 VGS = 10 V
1.5
1.4
1.3
100000
VGS = 0 V
10000
TJ = 150°C
1.2
1.1
1000
TJ = 125°C
1.0
0.9
w w w . D a00t..78a S h e e t 4 U . c o m
55 35 15 5 25 45 65 85 105 125 145 165
100
5
10 15 20 25 30 35 40
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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