NUF8600MN PDF даташит
Спецификация NUF8600MN изготовлена «ON Semiconductor» и имеет функцию, называемую «8-Channel EMI Filter». |
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Детали детали
Номер произв | NUF8600MN |
Описание | 8-Channel EMI Filter |
Производители | ON Semiconductor |
логотип |
6 Pages
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NUF8600MN
8-Channel EMI Filter with
Integrated ESD Protection
The NUF8600MN is a eight−channel (C−R−C) Pi−style EMI filter
array with integrated ESD protection. Its typical component values of
R = 50 W and C = 17 pF deliver a cutoff frequency of 115 MHz and
stop band attenuation greater than −25 dB from 800 MHz to 2.2 GHz.
This performance makes the part ideal for parallel interfaces with
data rates up to 77 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.
The NUF8600MN is available in the low−profile 18−lead 1.6 mm x
4.0 mm DFN16 surface mount package.
Features/Benefits
• ±18 kV ESD Protection on each channel (IEC61000−4−2 Level 4,
Contact Discharge)
• R/C Values of 50 W and 17 pF deliver Exceptional S21 Performance
Characteristics of 115 MHz f3dB and −25 dB Stop Band Attenuation
from 800 MHz to 2.2 GHz
• Integrated EMI/ESD System Solution in UDFN Package Offers
Exceptional Cost, System Reliability and Space Savings
• This is a Pb−Free Device
Applications
• EMI Filtering for LCD and Camera Data Lines
• EMI Filtering and Protection for I/O Ports and Keypads
http://onsemi.com
MARKING
DIAGRAM
1
16 DFN
CASE 506AC
1
845
AYW
G
845 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NUF8600MNTXG DFN16 4000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Filter + ESDn
R = 50 W
Cd = 17 pF Cd = 17 pF
Filter + ESDn
See Table 1 for pin description
www.DataSheet4U.com
Figure 1. Electrical Schematic
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
1.E+10
Figure 2. Insertion Loss Characteristic
(S21 Measurement)
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
1
Publication Order Number:
NUF8600MU/D
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NUF8600MN
1 2 3 45 6 7 8
GND
16 15 14 13 12 11 10
(Bottom View)
Figure 3. Pin Diagram
9
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Filter 1
1 & 16
Filter 2
2 & 15
Filter 3
3 & 14
Filter 4
4 & 13
Filter 5
5 & 12
Filter 6
6 & 11
Filter 7
7 & 10
Filter 8
8&9
Ground Pad
GND
Filter + ESD Channel 1
Filter + ESD Channel 2
Filter + ESD Channel 3
Filter + ESD Channel 4
Filter + ESD Channel 5
Filter + ESD Channel 6
Filter + ESD Channel 7
Filter + ESD Channel 8
Ground
Description
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
18 kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
VRWM
5.0 V
Breakdown Voltage
VBR IR = 1.0 mA
6.0 7.0 8.0 V
Leakage Current
IR VRWM = 3.3 V
100 nA
Resistance
RA IR = 20 mA 42 50 58 W
Diode Capacitance
Cd VR = 2.5 V, f = 1.0 MHz
17 20 pF
Line Capacitance
CL VR = 2.5 V, f = 1.0 MHz
34 40 pF
3 dB Cut−Off Frequency (Note 1)
www.DataSheet4U.com
6 dB Cut−Off Frequency (Note 1)
f3dB Above this frequency,
appreciable attenuation occurs
f6dB Above this frequency,
appreciable attenuation occurs
115
190
MHz
MHz
1. 50 W source and 50 W load termination.
http://onsemi.com
2
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NUF8600MN
TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
1.E+10
Figure 4. Insertion Loss Characteristic
(S21 Measurement)
0
−10
−20
−30
−40
−50
−60
−70
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
Figure 5. Analog Crosstalk Curve
(S41 Measurement)
1.E+10
2.0
1.5
1.0
0.5
00 1.0 2.0 3.0 4.0 5.0
REVERSE VOLTAGE (V)
Figure 6. Typical Capacitance vs. Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
60
58
56
54
52
50
48
46
−40
−20
0 20 40
TEMPERATURE (°C)
60
80
Figure 7. Typical Resistance over Temperature
www.DataSheet4U.com
102.0
101.5
101.0
100.5
100.0
99.5
99.0
98.5
98.0
−60 −40 −20 0
20 40 60
TEMPERATURE (°C)
80
100
Figure 8. Normalized Capacitance over Temperature
(Normalized @ 255C, VR = 2.5 V, f = 1 MHz)
http://onsemi.com
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