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PDF NTTFS4821N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4821N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS4821N
Power MOSFET
30 V, 57 A, Single N−Channel, m8FL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• This is a Pb−Free Device
Applications
• DC−DC Converters
• High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13.5
9.7
2.1
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
18.6 A
13.4
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJA (Note 2)
TC = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.1
7.5
5.4
0.66
57
41
38.5
171
90
−55 to
+150
38.5
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.1 mH, RG = 25 W)
www.DaL(t1ae/Sa8hd″ efTreoetmm4Upce.acrsaoetmufroer
for
10
Soldering
s)
Purposes
EAS
TL
55 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
7.0 mW @ 10 V
10.8 mW @ 4.5 V
ID MAX
57 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
MARKING DIAGRAM
1
SD
S 4821 D
S AYWWG D
GGD
4821
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4821NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4821NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 3
1
Publication Order Number:
NTTFS4821N/D
1 page  
NTTFS4821N
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
Ciss
1200
1000
800
600 Coss
400
200
0 Crss
0
5
VGS = 0 V
TJ = 25°C
10 15 20 25 30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10 100 ms
1 ms
1 VGS = 20 V
Single Pulse
TC = 25°C
0.1
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RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.1 1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
12
QT
10
8
6
4 Qgs
Qgd
VGS
2 ID = 30 A
0 TJ = 25°C
0 4 8 12 16 20 24
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
75
ID = 33 A
50
25
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTTFS4821N.PDF ] | |
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