DataSheet26.com

NTS4409N PDF даташит

Спецификация NTS4409N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTS4409N
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NTS4409N Даташит, Описание, Даташиты
NTS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
Advance Planar Technology for Fast Switching, Low RDS(on)
Higher Efficiency Extending Battery Life
This is a Pb−Free Device
Applications
Boost and Buck Converter
Load Switch
Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C
Steady TA = 25°C
State TA = 75°C
Steady State
Power Dissipation (Note 1)
tv5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
VDSS
VGS
ID
ID
PD
PD
IDM
TJ,
TSTG
IS
TL
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
−55 to
+150
0.3
260
V
V
A
A
W
W
A
°C
A
°C
ESD Rating − Machine Model
250 V
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450 °C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
www.D1a.taS(SCuhurefaeactr4eeaUm=.coo1u.mn1t2e7d
on FR4
in sq [1
board using 1 in sq pad
oz] including traces).
size
http://onsemi.com
V(BR)DSS
25 V
RDS(on) Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
ID Max
0.75 A
SC−70 (3−Leads)
Gate 1
3 Drain
Source 2
Top View
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
T4 WG
G
1
Gate
2
Source
T4 = Device Code
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTS4409NT1G SOT−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
NTS4409N/D









No Preview Available !

NTS4409N Даташит, Описание, Даташиты
NTS4409N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 70°C
TJ = 125°C
VDS = 0 V, VGS = 8.0 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = 4.5 V, ID = 0.6 A
VGS = 2.7 V, ID = 0.2 A
VGS = 4.5 V, ID = 1.2 A
VDS = 5.0 V, ID = 0.5 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 0.6 A
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
25
0.65
Typ
30
−2.0
249
299
260
0.5
49
22.4
8.0
1.2
0.2
0.28
0.3
5.0
8.2
23
41
0.82
Max Unit
V
mV/°C
0.5 mA
2.0
5.0
100 nA
1.5 V
mV/°C
350 mW
400
S
60 pF
30
12
1.5 nC
0.50
0.40
12 ns
8.0
35
60
1.20 V
www.DataSheet4U.com
http://onsemi.com
2









No Preview Available !

NTS4409N Даташит, Описание, Даташиты
3.2
8V
4.5 V
2.4
1.6
NTS4409N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
3.2
VDS 10 V
3V
2.5 V
VGS = 2 V
2.4
1.6
0.8
VGS = 1.5 V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.8
0
0
25°C
TJ = 125°C
TJ = −55°C
0.8 1.6 2.4 3.2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 2. Transfer Characteristics
0.8
VGS = 4.5 V
0.8
VGS = 2.5 V
0.6
TJ = 125°C
0.4
TJ = 25°C
0.2
TJ = −55°C
0
0 0.8 1.6 2.4 3.2
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.6 TJ = 125°C
0.4 TJ = 25°C
0.2 TJ = −55°C
0
0 0.8 1.6 2.4 3.2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 0.75 A
1.8
1.6
VGS = 2.5 V
1.4
VGS = 4.5 V
1.2
1
0.8
www.DataSheet4U.com
0.6
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
80
60
40
20
0
0
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
5 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
25
http://onsemi.com
3










Скачать PDF:

[ NTS4409N.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTS4409NSmall Signal MOSFETON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск