DataSheet26.com

NTS2101P PDF даташит

Спецификация NTS2101P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTS2101P
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

5 Pages
scroll

No Preview Available !

NTS2101P Даташит, Описание, Даташиты
NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
Leading Trench Technology for Low RDS(on) Extending Battery Life
−1.8 V Rated for Low Voltage Gate Drive
SC−70 Surface Mount for Small Footprint (2 x 2 mm)
Pb−Free Package is Available
Applications
High Side Load Switch
Charging Circuit
Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 70°C
t 5 s TA = 25°C
Steady TA = 25°C
State
VDSS
VGS
ID
PD
−8.0
±8.0
−1.4
−1.1
−1.5
0.29
V
V
A
A
W
t5s
0.33 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−3.0
−55 to
150
−0.46
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State (Note 1) RqJA
430 °C/W
Junction−to−Ambient − t 5 s (Note 1)
RqJA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
www.D1a.taSuhrefaect4eU−m.cooumnted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
−8.0 V
RDS(on) Typ
65 mW @ −4.5 V
78 mW @ −2.5 V
117 mW @ −1.8 V
ID Max
−1.4 A
P−Channel MOSFET
S
G
D
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TS M G
G
12
Gate Source
TS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTS2101PT1 SOT−323 3000/Tape & Reel
NTS2101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTS2101P/D









No Preview Available !

NTS2101P Даташит, Описание, Даташиты
NTS2101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V,
VDS = −6.4 V
TJ = 25°C
TJ = 70°C
VDS = 0 V, VGS = ±8.0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −1.0 A
VGS = −2.5 V, ID = −0.5 A
VGS = −1.8 V, ID = −0.3 A
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = −8.0 V
VGS = −5.0 V, VDD = −5.0 V,
ID = −1.0 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −4.0 V,
ID = −1.0 A, RG = 6.2 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −0.3 A
TJ = 125°C
Reverse Recovery Time
Charge Time
tRR VGS = 0 V, dISD/dt = 100 A/ms,
Ta IS = −1.0 A
Discharge Time
Tb
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
www.DataSheet4U.com
Min
−8.0
−0.45
Typ
−20
−10
−0.7
2.6
65
78
117
640
120
82
6.4
0.7
1.0
1.5
6.2
15
26
18
−0.62
−0.51
23.4
7.7
15.7
9.5
Max Unit
V
mV/°C
−1.0
−5.0
±100
mA
nA
V
mV/°C
100 mW
140
210
pF
nC
ns
−1.2 V
ns
nC
http://onsemi.com
2









No Preview Available !

NTS2101P Даташит, Описание, Даташиты
NTS2101P
TYPICAL ELECTRICAL CHARACTERISTICS
8.0
−2.2 V TJ = 25°C −2.0 V
6.0
VGS = −2.5 V to −4.5 V −1.8 V
4.0
−1.6 V
8.0 VDS w −10 V
6.0
4.0
2.0
0
0
−1.4 V
−1.2 V −1.0 V
1.0 2.0 3.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4.0
2.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0 0.4 0.8 1.2 1.6 2.0 2.4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.8
0.16
VGS = −4.5 V
0.12
0.08
TJ = 125°C
TJ = 25°C
0.16
VGS = −2.5 V
0.12
0.08
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.04
TJ = −55°C
0.04
0
0 2.0 4.0 6.0 8.0
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0
0 2.0 4.0 6.0 8.0
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current
and Temperature
1.5
ID = −1.0 A
VGS = −4.5 V
1.3
1000
800
600
1.1
400
0.9
www.DataSheet4U.com
200
0.7
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
0
0
CISS
TJ = 25°C
VGS = 0 V
COSS
CRSS
24 6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
8
http://onsemi.com
3










Скачать PDF:

[ NTS2101P.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTS2101PPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor
NTS2101PPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск