NTR4502P PDF даташит
Спецификация NTR4502P изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
|
Детали детали
Номер произв | NTR4502P |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
No Preview Available ! |
NTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel,
SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• Low RDS(ON) for Low Conduction Losses
• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)
• Pb−Free Packages are Available
Applications
• DC to DC Conversion
• Load/Power Switch for Portables and Computing
• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
• Battery Charging Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Power Dissipation
(Note 1)
t < 10 s TA = 25°C
TA = 70°C
t < 10 s
VDSS
VGS
ID
PD
−30
±20
−1.95
−1.56
1.25
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 70°C
Steady State
ID
PD
−1.13
−0.90
0.4
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−6.8
−55 to
150
−1.25
260
Unit
V
V
A
W
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
300 °C/W
Junction−to−Ambient – t = 10 s (Note 1)
www.DataSheet4U.com
RqJA
100
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) TYP
155 mW @ −10 V
240 mW @ −4.5 V
ID Max (Note 1)
−1.95 A
P−Channel MOSFET
S
G
D
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
TR2 M G
G
1
Gate
2
Source
TR2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NTR4502PT1
Package
SOT−23
Shipping†
3000 / Tape & Reel
NTR4502PT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NTR4502PT3 SOT−23 10000 / Tape & Reel
NTR4502PT3G SOT−23 10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 4
1
Publication Order Number:
NTR4502P/D
No Preview Available ! |
NTR4502P
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = −250 mA
VGS = 0 V, VDS = −30 V
TJ = 25°C
TJ = 55°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = −250 mA
VGS = −10 V, ID = −1.95 A
VGS = −4.5 V, ID = −1.5 A
VDS = −10 V, ID=−1.25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1 MHz, VDS = −15 V
VGS = −10 V, VDS = −15 V; ID = −1.95 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
VGS =−10 V, VDD = −15 V,
ID = −1.95 A, RG = 6 W
Forward Diode Voltage
VSD VGS = 0 V, IS = −1.25 A
Reverse Recovery Time
tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.25 A
2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−30
−1.0
Typ
155
240
3
200
80
50
6
0.3
1
1.7
5.2
12
19
17.5
−0.8
23
Max Unit
−1
−10
±100
V
mA
nA
−3.0 V
200 mW
350
S
pF
10 nC
10 ns
20
35
30
−1.2 V
ns
www.DataSheet4U.com
http://onsemi.com
2
No Preview Available ! |
NTR4502P
5 VGS = −4.0 V
TJ = 25°C
4
VGS = −5.0 V
VGS = −3.8 V
VGS = −7.0 V
VGS = −3.6 V
3
VGS = −10 V
VGS = −3.4 V
2 VGS = −3.2 V
VGS = −3.0 V
1
VGS = −2.4 V
VGS = −2.8 V
VGS = −2.6 V
0
0 1 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5 VDS = −10 V
4 TJ = −55°C
3
TJ = 25°C
TJ = 100°C
2
1
0
1 23 456
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
0.4
0.35
0.3
0.25
0.2
0.15
0.1
3
ID = −1.95 A
TJ = 25°C
0.3
TJ = 25°C
0.25
VGS = −4.5 V
0.2
0.15
VGS = −10 V
0.1
4 5 6 7 8 9 10
1 1.5 2 2.5 3 3.5 4 4.5 5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8 1000
ID = −1.9 A
VGS = 0 V
1.6 VGS = −10 V
TJ = 150°C
1.4 100
1.2
1 10
0.8 TJ = 100°C
www.DataSh0e.e6t4U.com
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
1
2 6 10 14 18 22 26 30
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
Скачать PDF:
[ NTR4502P.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTR4502P | Power MOSFET ( Transistor ) | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |