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CHM8208JPT PDF даташит

Спецификация CHM8208JPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM8208JPT
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM8208JPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM8208JPT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts CURRENT 7 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
CONSTRUCTION
* N-Channel Enhancement
CIRCUIT
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8D1 D1 D2 D25
14
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
Dimensions in millimeters
SO-8
CHM8208JPT
20
±12
7
25
2000
-55 to 150
-55 to 150
Units
V
V
A
mW
°C
°C
62.5
°C/W
2007-11









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CHM8208JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM8208JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 20 V, VGS = 0 V
VGS = 12V,VDS = 0 V
VGS = -12V, VDS = 0 V
30 V
1 µA
+10 nA
-10 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
VGS=2.5V, ID=5.6A
0.5 1.2 V
18 22
m
24 32
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=10V, ID=7A
VGS=4.5V
VDD= 10V
ID = 1A, VGS= 4.5 V
RGEN= 6
40
115 pF
15
4.2 5.6
1.0
2.4
0.34 0.68
0.68 1.72
3.58 7.16
24
nC
uS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = 7A, VGS= 0 V (Note 2)
7A
1.2 V
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CHM8208JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM8208JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
50
V G S =4.5,3.5,2.5V
40
30
20
10
0
0
VG S =1 . 5 V
0.2 0.4
0.6
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
0.8
Figure 2. Transfer Characteristics
10
8
6
4
2
TJ=125°C
TJ=-55°C
TJ=25°C
0
0 0.5 1.0 1.5 2.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
2.5
Figure 3. Gate Charge
5
VDS=48V
ID=3.7A
4
3
2
1
0
01234
Qg , TOTAL GATE CHARGE (nC)
56
Figure 4. On-Resistance Variation with
Temperature
2.2
VGS=4.5V
ID=7A
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50 0
50 100
TJ , JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50
75 100
TJ , JUNCTION T EMPERATURE (°C)
125
150
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CHM8208JPTDual N-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
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