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CHM8531JPT PDF даташит

Спецификация CHM8531JPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «Dual P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM8531JPT
Описание Dual P-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM8531JPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM8531JPT
Dual P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 5.9 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
* Lead free product is acquired.
CONSTRUCTION
* P-Channel Enhancement
CIRCUIT
8D1 D1 D2 D25
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
1S1 G1 S2 G24
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Dimensions in millimeters
CHM8531JPT
-30
±20
-5.9
-20
2000
-55 to 150
-55 to 150
62.5
SO-8
Units
V
V
A
mW
°C
°C
°C/W
2006-02









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CHM8531JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM8531JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
-30 V
-1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = -250 µA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-2.0A
VDS = -15V, ID = -5.3A
-1 -3 V
30 36
45 60
m
8S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=-15V, ID=-5.3A
VGS=-10V
VDD= -15V
ID = -1.0A, VGS= -10 V
RGEN= 6
20 25
3
5
10 20
4 10
58 80
23 30
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = -2.3A, VGS= 0 V (Note 2)
-2.3 A
-1.2 V
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Номер в каталогеОписаниеПроизводители
CHM8531JPTDual P-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
Chenmko Enterprise

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