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CHM4301ZPT PDF даташит

Спецификация CHM4301ZPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM4301ZPT
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM4301ZPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 40 Volts CURRENT 6.3 Ampere
CHM4301ZPT
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
CONSTRUCTION
* P-Channel Enhancement
6.50+0.20
3.00+0.10
SC-73/SOT-223
1.65+0.15
0.90+0.05
2.0+0.3
0.70+0.10
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
0.9+0.2
0.27+0.05
0.01~0.10
CIRCUIT
3D
1G
2S
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
www.DataSheReθtJ4AU.comThermal Resistance, Junction-to-Ambient (Note 1)
13
1 Gate
2
2 Source
3 Drain ( Heat Sink )
Dimensions in millimeters
CHM4301ZPT
-40
±20
-6.3
-25
3000
-55 to 150
-55 to 150
42
SC-73/SOT-223
Units
V
V
A
mW
°C
°C
°C/W
2008-01









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CHM4301ZPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC ( CHM4301ZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = -250 µA
VDS = -32 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
-40 V
-1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = -250 µA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-3A
VDS = -5V, ID = -6A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -20V, VGS = 0V,
f = 1.0 MHz
-1 -3 V
36 44
m
52 68
5S
1110
200
115
pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=-20V, ID=-5A
VGS=-10V
VDD= -20V
ID = -5.0A, VGS= -10 V
RGEN= 3
20 26
3.2
4.2
11 22
48
39 68
12 24
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = -1.0A, VGS= 0 V (Note 2)
-6 A
-1.3 V
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CHM4301ZPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM4301ZPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
10
V G S =-1 0 , - 6 , - 5 V
8
6
4
VG S =-3 . 0 V
2
0
0 1.0 2.0 3.0 4.0 5.0
-VDS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
8
6
4
TJ=125°C TJ=-55°C
2
TJ=25°C
0
0 1.0 2.0 3.0 4.0 5.0
-VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
VDS=-20V
ID=-5A
8
6
4
2
0
0 4 8 12 16
Qg , TOTAL GATE CHARGE (nC)
20
Figure 4. On-Resistance Variation with
Temperature
2.2
VGS=-10V
ID=-6.3A
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50 0
50 100 150
TJ , JUNCTION T EMPERATURE (°C)
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50
75 100
TJ , JUNCTION T EMPERATURE (°C)
125
150
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Номер в каталогеОписаниеПроизводители
CHM4301ZPTP-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
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