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CHM453NZPT PDF даташит

Спецификация CHM453NZPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM453NZPT
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM453NZPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM453NZPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SC-73/SOT-223)
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
6.50+0.20
3.00+0.10
SC-73/SOT-223
1.65+0.15
0.90+0.05
2.0+0.3
CONSTRUCTION
* N-Channel Enhancement
0.70+0.10
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
0.9+0.2
0.27+0.05
0.01~0.10
CIRCUIT
D (3)
(1) G
S (2)
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
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RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
13
1 Gate
2
2 Source
3 Drain ( Heat Sink )
Dimensions in millimeters
CHM453NZPT
30
±20
8.0
15
3000
-55 to 150
-55 to 150
42
SC-73/SOT-223
Units
V
V
A
mW
°C
°C
°C/W
2006-01









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CHM453NZPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM453NZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
30 V
1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS=10V, ID=8.0A
VGS=4.5V, ID=6.7A
VDS =15V, ID = 8.0A
13
24 28
33 42
6 10
V
m
S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=15V, ID=2A
VGS=10V
VDD= 25V
ID = 1A, VGS= 10 V
RGEN= 6
20 24
3
6
10 15
20 35
40 50
35 50
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = 8A, VGS= 0 V (Note 2)
2.3 A
1.3 V
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Номер в каталогеОписаниеПроизводители
CHM453NZPTN-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
Chenmko Enterprise

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