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NIC9N05TS1 PDF даташит

Спецификация NIC9N05TS1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Protected Power MOSFET».

Детали детали

Номер произв NIC9N05TS1
Описание Protected Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NIC9N05TS1 Даташит, Описание, Даташиты
NIC9N05TS1, NIC9N05ATS1
Protected Power MOSFET
2.6 A, 52 V, NChannel, Logic Level,
Clamped MOSFET w/ ESD Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol Value
Unit
DraintoSource Voltage Internally Clamped
GatetoSource Voltage Continuous
Operating and Storage Temperature Range
ElectroStatic Discharge Capability (HBM)
(MM)
VDSS
VGS
TJ, Tstg
ESD
5259
±15
55 to 150
5000
500
V
V
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Drain
(Pins 2, 4)
Gate
(Pin 1)
Overvoltage
RG Protection
ESD Protection
MPWR
Source
(Pin 3)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 1
1
Publication Order Number:
NIC9N05TS1/D









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NIC9N05TS1 Даташит, Описание, Даташиты
NIC9N05TS1, NIC9N05ATS1
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Note 1)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
V(BR)DSS
52
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
IDSS
GateBody Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
ON CHARACTERISTICS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 100 mA)
VGS(th)
1.3
Static DraintoSource OnResistance
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
SOURCEDRAIN DIODE CHARACTERISTICS
RDS(on)
Forward OnVoltage
IS = 2.6 A, VGS = 0 V
IS = 2.6 A, VGS = 0 V, TJ = 125°C
VSD
1. Wafers tested prior to sawing.
Typ
55
±22
1.75
190
165
107
0.81
0.66
Max
59
10
±10
2.5
380
200
125
1.5
Unit
V
mA
mA
V
mW
V
ORDERING INFORMATION
Device
NIC9N05TS1
NIC9N05ATS1
Shipping
5000 / Reel
5000 / Reel
http://onsemi.com
2









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NIC9N05TS1 Даташит, Описание, Даташиты
NIC9N05TS1, NIC9N05ATS1
Layout view of the die in reel
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
http://onsemi.com
3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NIC9N05TS1/D










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Номер в каталогеОписаниеПроизводители
NIC9N05TS1Protected Power MOSFETON Semiconductor
ON Semiconductor

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