DataSheet26.com

NSB13ANT3G PDF даташит

Спецификация NSB13ANT3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «600 Watt Peak Power Zener Transient Voltage Suppressor».

Детали детали

Номер произв NSB13ANT3G
Описание 600 Watt Peak Power Zener Transient Voltage Suppressor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NSB13ANT3G Даташит, Описание, Даташиты
NSB13ANT3G
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional
The NSB13ANT3G is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NSB13ANT3G is ideally
suited for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other industrial/
consumer applications.
Specification Features:
ăWorking Peak Reverse Voltage Range - 13 V
ăPeak Power - 600 Watts @ 1 ms at Maximum Clamp Voltage @
Peak Pulse Current
ăESD Rating of Class 3 (> 16 kV) per Human Body Model
ăESD Rating IEC 61000-4-2 Level 4 (> 30 kV)
ăLow Leakage < 5 mA at 13 V
ăUL 497B for Isolated Loop Circuit Protection
ăResponse Time is Typically < 1 ns
ăPb-Free Package is Available
Mechanical Characteristics:
CASE: Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L-Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Please See the Table on the Following Page
www.DataSheet4U.com
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
Cathode
Anode
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
LENĂG
G
A = Assembly Location
Y = Year
WW = Work Week
LEN = Specific Device Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSB13ANT3G
Package
SMB
(Pb-Free)
Shipping
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NSB13AN/D









No Preview Available !

NSB13ANT3G Даташит, Описание, Даташиты
NSB13ANT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PPK
PD
RqJL
600 W
3.0 W
40 mW/°C
25 °C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RqJA
0.55 W
4.4 mW/°C
226 °C/W
Operating and Storage Temperature Range
TJ, Tstg
-65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non-repetitive at maximum IPPM and VCM, see electrical characteristics.
2. 1square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
IT = 1 mA
VRWM = 13 V
IPPM = 27.9 A
(Per Figure 1, Note 6)
VBR
IR
VCM
Forward Peak Voltage
IF = 30 A
(Note 4)
VF
Capacitance
VR = 0 V, f = 1 MHz
Ctyp
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non-repetitive duty cycle.
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, IPPM.
www.DataSheet4U.com
Min
14.4
Typ
15.15
Max
15.9
5.0
21.5
3.5
1160
Unit
V
mA
V
V
pF
http://onsemi.com
2









No Preview Available !

NSB13ANT3G Даташит, Описание, Даташиты
NSB13ANT3G
t10 ms
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
100
PEAK VALUE - IPP
50
HALF VALUE -
IPP
2
tP
0
01 2 34
t, TIME (ms)
Figure 1. 10 × 1000 ms Pulse Waveform
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
www.DataSheet4U.com
http://onsemi.com
3










Скачать PDF:

[ NSB13ANT3G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NSB13ANT3G600 Watt Peak Power Zener Transient Voltage SuppressorON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск