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NSM21356DW6T1G PDF даташит

Спецификация NSM21356DW6T1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual Complementary Transistors».

Детали детали

Номер произв NSM21356DW6T1G
Описание Dual Complementary Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSM21356DW6T1G Даташит, Описание, Даташиты
NSM21356DW6T1G
Dual Complementary
Transistors
General Purpose PNP Transistor and
NPN Transistors with Monolithic Bias
Network
NSM21356DW6T1G contains a single PNP transistor and a
monolithic bias network NPN transistor with two resistors; a series
base resistor and a base-emitter resistor. This device is designed to
replace multiple transistors and resistors on customer boards by
integrating these components into a single device.
NSM21356DW6T1G is housed in a SC-88/SOT-363 package which
is ideal for low power surface mount applications in space constrained
applications.
Features
ăSimplifies Circuit Design
ăReduces Board Space
ăReduces Component Count
ăQ1: NPN BRT, R1 = R2 = 47 k
ăQ2: PNP
ăThis is a Pb-Free Device
Applications
ăLogic Switching
ăAmplification
ăDriver Circuits
ăInterface Circuits
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating - Q1 (NPN BRT)
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
Rating - Q2 (PNP)
Symbol
VCBO
VCEO
IC
Symbol
Value
ā50
ā50
100
Value
Unit
Vdc
Vdc
mAdc
Unit
Collector - Base Voltage
V(BR)CBO
-ā80
Vdc
Collector - Emitter Voltage
V(BR)CEO
-ā65
Vdc
Emitter - Base Voltage
V(BR)EBO
-ā5.0
Vdc
Collector Current - Continuous
IC
-100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
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the Recommended
stresses above the
Recommended Operating Conditions may affect device reliability.
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(3) (2) (1)
Q1
R2 R1
(4) (5)
Q2
(6)
6
1
SC-88/SOT-363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
N2 M G
G
1
N2 = Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSM21356DW6T1G SC-88 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
Publication Order Number:
NSM21356DW6/D









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NSM21356DW6T1G Даташит, Описание, Даташиты
NSM21356DW6T1G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation,
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu.
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
180 (Note 1)
1.44 (Note 1)
692 (Note 1)
Max
230
1.83
544
-ā55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS - Q1 NPN BRT (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector‐Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter‐Base Cutoff Current
(VEB = 6.0 V, IC = 0)
Collector‐Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector‐Emitter Breakdown Voltage (Note 2)
(IC = 2.0 mA, IB = 0)
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
-
-
-
50
50
- 100 nAdc
- 500 nAdc
- 0.1 mAdc
- - Vdc
- - Vdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector‐Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
hFE 80 140 -
VCE(sat)
-
- 0.25 Vdc
VOL
-
- 0.2 Vdc
VOH
4.9
-
- Vdc
R1 32.9 47 61.1 kW
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
0.8
1.0
1.2
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NSM21356DW6T1G Даташит, Описание, Даташиты
NSM21356DW6T1G
ELECTRICAL CHARACTERISTICS - Q2 PNP (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage
(IC = -10 mA)
V(BR)CEO
Collectorā-āEmitter Breakdown Voltage
(IC = -10 mA, VEB = 0)
Collectorā-āBase Breakdown Voltage
(IC = -10 mA)
Emitterā-āBase Breakdown Voltage
(IE = -1.0 mA)
Collector Cutoff Current (VCB = -30 V)
Collector Cutoff Current (VCB = -30 V, TA = 150°C)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = -10 mA, VCE = -5.0 V)
(IC = -2.0 mA, VCE = -5.0 V)
Collectorā-āEmitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
Baseā-āEmitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
Baseā-āEmitter On Voltage
(IC = -2.0 mA, VCE = -5.0 V)
(IC = -10 mA, VCE = -5.0 V)
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min
-65
-80
-80
-5.0
-
-
-
220
-
-
-
-
-0.6
-
Typ Max Unit
- -V
- -V
- -V
- -V
- -15 nA
- -4.0 mA
150 -
290 475
- -0.3
- -0.65
-0.7 -
-0.9 -
- -0.75
- -0.82
-
V
V
V
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300
250
200
150
100
50
0
-ā50
RqJA = 833°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
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Номер в каталогеОписаниеПроизводители
NSM21356DW6T1GDual Complementary TransistorsON Semiconductor
ON Semiconductor

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