NSS20101J PDF даташит
Спецификация NSS20101J изготовлена «ON Semiconductor» и имеет функцию, называемую «20 V 1.0 A / Low VCE(sat) NPN Transistor». |
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Детали детали
Номер произв | NSS20101J |
Описание | 20 V 1.0 A / Low VCE(sat) NPN Transistor |
Производители | ON Semiconductor |
логотип |
5 Pages
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NSS20101J
20 V, 1.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
20 Vdc
40 Vdc
6.0 Vdc
1.0 A
2.0 A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
255 mW
2.0 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
490
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
415
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
www.DR1a.teacFSoRhm−eme4te4@nUd1e.c0do0Ommpemr2a,ti1ngozC.ocnodpiptioenr stramcaeys.affect device reliability.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
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20 VOLTS, 1.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
SC−89
CASE 463C
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Collector
xx M G
G
12
Base Emitter
xx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS20101JT1G SC−89 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NSS20101J/D
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NSS20101J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 100 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.5 mA)
(IC = 0.10 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.1 A)
Base −Emitter Saturation Voltage (Note 3)
(IC = 0.5 A, IB = 50 mA)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 0.5 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 2.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 4.0 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Min
20
40
6.0
200
200
150
100
Typ Max Unit
Vdc
Vdc
Vdc
mAdc
0.1
mAdc
0.1
500
0.015
0.040
0.115
0.220
1.1
V
V
0.90 V
350 MHz
40 pF
6 pF
TYPICAL CHARACTERISTICS
0.40
0.35
0.30
0.25
Note 2
0.20
Note 1
0.15
0.10
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0
0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Power Derating
160
600
500
400
300
200
100
0
0.001
150°C
25°C
−55°C
VCE = 2 V
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
10
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2
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600
500
400
300
200
100
0
0.001
150°C
25°C
NSS20101J
TYPICAL CHARACTERISTICS
VCE = 4 V
1
0.1
25°C
150°C
−55°C
−55°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.01
0.001
10 0.001
0.01
0.1
IC/IB = 10
1 10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1
IC/IB = 20
0.1
25°C
150°C
−55°C
0.01
0.001
0.001
0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
1.4
IC/IB = 50
1.2
1.0
−55°C
0.8 25°C
0.6 150°C
0.4
0.2
www.DataShee0t.40U01.com 0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
10
1.6
VCE = 2 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.001
−55°C
25°C
150°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Voltage
10
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3
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NSS20101J | 20 V 1.0 A / Low VCE(sat) NPN Transistor | ON Semiconductor |
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