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PDF NSS40300DDR2G Data sheet ( Hoja de datos )
| Número de pieza | NSS40300DDR2G | |
| Descripción | Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS40300DDR2G
Dual 40 V, 6.0 A, Low
VCE(sat) PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• Halide Free
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−40 Vdc
−40 Vdc
−7.0 Vdc
−3.0 A
−6.0 A
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLTS
6.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
7,8
COLLECTOR
5,6
2
BASE
4
BASE
1
EMITTER
3
EMITTER
8
1
SOIC−8
CASE 751
STYLE 16
DEVICE MARKING
8
40300
AYWWG
G
1
40300 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
www.DataSheet4U.com
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
ORDERING INFORMATION
Device
Package
Shipping†
NSS40300DDR2G SOIC−8
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40300D/D
1 page  
350
300
250
200
150
100
0
NSS40300DDR2G
TYPICAL CHARACTERISTICS
Cibo (pF)
123 45
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1.0
100
90
80
70
60
50
Cobo (pF)
40
30
6 0 5 10 15 20 25 30 35 40
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
1 ms
1 s 10 ms
100 ms
0.1
Thermal Limit
0.01
0.001 Single Pulse Test at TA = 25°C
0.01 0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
100
www.DataSheet4U.com
http://onsemi.com
5
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