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CES2314 PDF даташит

Спецификация CES2314 изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CES2314
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

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CES2314 Даташит, Описание, Даташиты
CES2314
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4A, RDS(ON) = 50m@VGS = 10V.
RDS(ON) = 70m@VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 4
IDM 16
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
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Units
V
V
A
A
W
C
Units
C/W
Rev 1. 2005.July
http://www.cetsemi.com
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CES2314 Даташит, Описание, Даташиты
CES2314
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA 1.0
3.0 V
VGS = 10V, ID = 4A
40 50 m
VGS = 4.5V, ID = 3A
55 70 m
VDS = 5V, ID = 4A
8S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
650
182
pF
pF
Crss 85 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 4A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 4A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
10 20 ns
3 8 ns
22 45 ns
3 8 ns
5.3 7 nC
2.6 nC
1.3 nC
1A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7
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CES2314 Даташит, Описание, Даташиты
10
VGS=4.5,3.5,2.5V
VGS=2.0V
8
6
4
2
VGS=1.5V
0
0.0 0.5 1.0 1.2 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
Ciss
600
400
200 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
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0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CES2314
10
25 C
8
6
4
2
TJ=125 C
0
0
1
-55 C
2
3
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=4A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










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