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CET4301 PDF даташит

Спецификация CET4301 изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CET4301
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

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CET4301 Даташит, Описание, Даташиты
CET4301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -6.3A, RDS(ON) = 44m@VGS = -10V.
RDS(ON) = 68m@VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -40
VGS ±20
ID -6.3
IDM -25
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
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Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com









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CET4301 Даташит, Описание, Даташиты
CET4301
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -32V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -6A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-40
-1
Typ
36
52
5
1110
200
115
11
4
39
12
20
3.2
4.2
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
44 m
68 m
S
pF
pF
pF
22 ns
8 ns
68 ns
24 ns
26 nC
nC
nC
-6 A
-1.3 V
5
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2









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CET4301 Даташит, Описание, Даташиты
10
-VGS=10,6,5V
8
6
-VGS=3.0V
4
2
0
012345
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
Ciss
750
500
250 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
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0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CET4301
10
8
6
4
2
TJ=125 C
0
01
25 C
2
-55 C
34
5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-6.3A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










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Номер в каталогеОписаниеПроизводители
CET4301P-Channel Enhancement Mode Field Effect TransistorChino-Excel Technology
Chino-Excel Technology

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