(PDF) CEU01N6G Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEU01N6G
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Chino-Excel Technology
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No Preview Available ! CED01N6G/CEU01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 1 IDM 4 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 31 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W W/ C C Thermal Characteristics Parameter wwTwh.eDrmataalSRheeseits4taUn.cceo,mJunction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2009.Jul. http://www.cetsemi.com 1 page

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PDF CEU01N6G Data sheet ( Hoja de datos )