DataSheet26.com

CED02N6G PDF даташит

Спецификация CED02N6G изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CED02N6G
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

4 Pages
scroll

No Preview Available !

CED02N6G Даташит, Описание, Даташиты
CED02N6G/CEU02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2A, RDS(ON) = 5@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 600
VGS ±30
ID
2
1.3
IDM 8
52
PD 0.4
EAS 11.25
IAS 1.5
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
wwTwh.eDrmataalSRheeseits4taUn.cceo,mJunction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 5. 2011.Feb
http://www.cetsemi.com









No Preview Available !

CED02N6G Даташит, Описание, Даташиты
CED02N6G/CEU02N6G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
2
4
RDS(on)
VGS = 10V, ID = 1A
3.8 5
V
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
295
75
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 18
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 38 ns
11 22 ns
29 58 ns
10 20 ns
6.7 8.9 nC
1.5 nC
3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1A
1.9 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, IAS =1.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C
www.DataSheet4U.com
2









No Preview Available !

CED02N6G Даташит, Описание, Даташиты
CED02N6G/CEU02N6G
3.0
2.5 VGS=10,9,8,7V
2.0 VGS=6V
1.5
1.0
0.5 VGS=5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3.0
TJ=125C
2.5
2.0
1.5
1.0
0.5
0
0
25 C
-55 C
2.5 5 7.5
10 12.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
900
750
600
450 Ciss
300
150
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
www.DataSheet4U.com
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=1A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










Скачать PDF:

[ CED02N6G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CED02N6N-Channel Logic Level Enhancement Mode Field Effect TransistorCET
CET
CED02N65AN-Channel Enhancement Mode Field Effect TransistorCET
CET
CED02N6AN-Channel Enhancement Mode Field Effect TransistorCET
CET
CED02N6GN-Channel Enhancement Mode Field Effect TransistorChino-Excel Technology
Chino-Excel Technology

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск