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CEU05P03 PDF даташит

Спецификация CEU05P03 изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEU05P03
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

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CEU05P03 Даташит, Описание, Даташиты
CED05P03/CEU05P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -15A, RDS(ON) = 70m@VGS = -10V.
RDS(ON) = 120m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-30
±20
-15
-45
42
0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Aug
http://www.cetsemi.com









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CEU05P03 Даташит, Описание, Даташиты
CED05P03/CEU05P03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -7.5A
VGS = -4.5V, ID = -4.5A
VDS = -15V, ID = -7.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -7.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -7.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
42 70 m
78 120 m
8S
1040
420
150
pF
pF
pF
8 15
11 20
23 40
14 25
22.5 29
2
6
ns
ns
ns
ns
nC
nC
nC
-15 A
-1.3 V
6
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CEU05P03 Даташит, Описание, Даташиты
CED05P03/CEU05P03
25
-VGS=10,8V
20
-VGS=6V
15
-VGS=5V
10
5 -VGS=4V
-VGS=3V
0
0123456
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
25
20
15
10
5 TJ=125 C
25 C
-55 C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1500
1250
1000
Ciss
750
500 Coss
250 Crss
0
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
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0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=-7.5A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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