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GP1S29 PDF даташит

Спецификация GP1S29 изготовлена ​​​​«Sharp» и имеет функцию, называемую «Subminiature Photointerrupter».

Детали детали

Номер произв GP1S29
Описание Subminiature Photointerrupter
Производители Sharp
логотип Sharp логотип 

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GP1S29 Даташит, Описание, Даташиты
GP1S29
s Features
1. Ultra-compact type
2. Thin detection portion
( Thickness of detection portion: 3.2mm )
s Applications
1. Cameras
2. Floppy disk drives
Note ) Please use carefully not to
receive external disturbing
light because the back face of
detector element is not covered
with case.
GP1S29
Subminiature Photointerrupter
s Outline Dimensions
( Unit : mm)
Internal connection diagram
32
3.6
(1.15)
Center of
light path
3.2
0.9
41
1 Anode
2 Cathode
(C0.8)
4.0
3 Emitter
4 Collector
(0.8)
Slit width
(C0.3)
4 - 0.15
g
2.54
Rest of gate
(2)
4 - 0.4
g
2.54
4 1 * Tolerance 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by g refer
3 2 to those measured from the lead base.
s Absolute Maximum Ratings
Parameter
Forward current
Input
Reverse voltage
www.DataSheet4PoUw.cerodmissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
*1 For 5 seconds
Symbol
IF
VR
P
VCEO
VECO
IC
PC
P tot
T opr
T stg
T sol
(Ta = 25˚C )
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
Soldering area
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.









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GP1S29 Даташит, Описание, Даташиты
s Electro-optical Characteristics
Input
Output
Transfer-
charac-
teristics
Parameter
Forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter saturation voltage
Response time
Rise time
Fall time
Symbol
VF
IR
I CEO
Ic
VCE( sat )
tr
tf
Conditions
IF = 20mA
VR = 3V
V CE = 20V
IF = 1.5mA, VCE = 5V
IF = 3mA, I C = 30 µ A
VCE = 5V, R L = 1k
I C = 100 µ A
GP1S29
MIN.
-
-
-
40
-
-
-
( Ta = 25˚C)
TYP.
1.2
-
-
-
-
50
50
MAX.
1.4
10
1 x 10 - 7
240
0.4
150
150
Unit
V
µA
A
µA
V
µs
µs
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
40
30
20
10
0
- 25 0 25 50 75 85 100
Ambient temperature T a (˚C)
Fig. 3 Forward Current vs. Forward Voltage
500
200 T a = 75˚C
50˚C
ww1w00.DataSheet4U.com
50
25˚C
0˚C
- 25˚C
20
10
5
2
1
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage V F (V)
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P tot
100
80 P, P c
60
40
20
0
- 25 0 25 50 75 85 100
Ambient temperature T a (˚C)
Fig. 4 Collector Current vs. Forward Current
1.8
1.6
V CE= 5V
T a= 25˚C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Forward current I F ( mA )









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GP1S29 Даташит, Описание, Даташиты
Fig. 5 Collector Current vs. Collector-
emitter Voltage
10
T a= 75˚C
9
P C(MAX.)
8
IF = 50mA
7
40mA
6
5 30mA
4 20mA
3
2 10mA
1
1.5mA
0
0 1 2 3 4 5 6 7 8 9 10
Collector-emitter voltage V CE ( V)
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.12
IF = 10mA
IC = 50 µ A
0.10
0.08
0.06
0.04
0.02
0
- 25
0 25 50 75
Ambient temperature T a (˚C)
100
Fig. 9 Response Time vs. Load Resistance
500 IC = 100 µ A
200 V CE= 5V
T a= 25˚C
ww1w00 .DataSheet4U.com
50 t f
20 t r
td
10
5
2
ts
1
5
0.3
0.05 0.1 0.2 0.5 1 2
5 10 20
Load resistance RL ( k )
50 100
GP1S29
Fig. 6 Collector Current vs.
Ambient Temperature
0.30
0.25
IF= 1.5mA
VCE= 5V
0.20
0.15
0.10
0.05
0
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig. 8 Collector Dark Current vs. Ambient
Temperature
10 - 6
5 V CE= 20V
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
2
10 - 10
0
25 50 75
Ambient temperature T a (˚C)
100
Test Circuit for Response Time
Input RD
VCC
RL
Output
Input
Output
td ts
tr tf
10 %
90 %










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