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PDF NTR3162P Data sheet ( Hoja de datos )
| Número de pieza | NTR3162P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTR3162P
Power MOSFET
−20 V, −3.6 A, Single P−Channel, SOT−23
Features
• Low RDS(on) at Low Gate Voltage
• −0.3 V Low Threshold Voltage
• Fast Switching Speed
• This is a Pb−Free Device
Applications
• Battery Management
• Load Switch in PWM
• Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
IDM
TJ,
Tstg
IS
TL
−20
±8
−2.2
−1.6
−3.6
0.48
1.25
−10.7
−55 to
150
−0.6
260
V
V
A
W
A
°C
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
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V(BR)DSS
−20 V
RDS(on) MAX
70 mW @ −4.5 V
95 mW @ −2.5 V
120 mW @ −1.8 V
ID MAX
−2.2 A
−1.9 A
−1.7 A
SIMPLIFIED SCHEMATIC
Gate
Drain
Source
(Top View)
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TRDMG
G
1
1
Gate
2
Source
TRD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR3162PT1G SOT−23
(Pb−Free)
3000 /
Tape & Reel
NTR3162PT3G SOT−23
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
Publication Order Number:
NTR3162P/D
1 page  
NTR3162P
100
VGS = −8 V
SINGLE PULSE
10 TC = 25°C
1
100 ms
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t, TIME (s)
Figure 14. Thermal Response
10
100
1000
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR3162P.PDF ] | |
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